Infineon IRF6717MTR1PBF
$ 2.98
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF6717MTR1PBF | 0 | 1K | Bulk | 4h | |||||||
| Farnell | IRF6717MTR1PBF | 0 | 1 | Cut Tape | 11h | |||||||
| Component Stockers USA | IRF6717MTR1PBF | 21.126 | 3d | |||||||||
| Win Source | WS-IRF6717MTR1PBF | 46.280 | 95 | 12h | ||||||||
| Worldway Electronics | IRF6717MTR1PBF | 17.415 | 7 | Tape & Reel | 1d |
Alternative Teile
Dieser Teil
Alternative Teile
Price @ 1000
$ 2.98
$ 1.49
Stock
164,607
960,819
Authorized Distributors
2
6
Mount
Surface Mount
Surface Mount
Case/Package
L
-
Drain to Source Voltage (Vdss)
25 V
25 V
Continuous Drain Current (ID)
38 A
38 A
Threshold Voltage
1.8 V
-
Rds On Max
1.25 mΩ
1.25 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
2.8 W
2.8 W
Input Capacitance
6.75 nF
6.75 nF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-10-07
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Beschreibungen
Beschreibungen von Infineon IRF6717MTR1PBF, die von den Distributoren bereitgestellt werden.
Trans MOSFET N-CH 25V 38A 7-Pin Direct-FET MX T/R
DIRECTFET POWER MOSFET Power Field-Effect Transistor, 38A I(D), 25V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 38 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
MOSFET N CH, 25V 38A SMD; Transistor Polarity:N Channel; Continuous Drain Current Id:38A; Drain Source Voltage Vds:25V; On Resistance Rds(on):1.25mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:96W; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:DirectFET MX; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2012); Current Id Max:220A; Driver Case Style:MX; Package / Case:L6; Power Dissipation Pd:2.8W; Power Dissipation Pd:96W; Pulse Current Idm:38A; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:25V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1.35V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageL
MountSurface Mount
Number of Pins7
Number of Terminals3
Technical
Continuous Drain Current (ID)38 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance1.25 mΩ
Drain to Source Voltage (Vdss)25 V
Dual Supply Voltage25 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.75 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation96 W
Manufacturer Package IdentifierMG-WDSON-5
Min Breakdown Voltage25 V
Min Operating Temperature-40 °C
Nominal Vgs1.8 V
Number of Channels1
Number of Elements1
On-State Resistance1.25 mΩ
Package Quantity1000
PackagingTape & Reel
Power Dissipation2.8 W
Rds On Max1.25 mΩ
Recovery Time41 ns
Resistance1.25 MΩ
Rise Time37 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage1.8 V
Turn-Off Delay Time19 ns
Turn-On Delay Time25 ns
Dimensions
Height700 µm
Length5.45 mm
Width5.05 mm
Compliance
Umweltklassifizierung
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen