Infineon IRF6716MTR1PBF
$ 2.85
Production
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2021-04-28
Lifecycle StatusProduction (Last Updated: 4 months ago)
Verwandte Teile
InfineonIRF6797MTR1PBF
Power Field-Effect Transistor, 210A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
InfineonIRF6729MTR1PBF
Power Field-Effect Transistor, 190A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
STMicroelectronicsSTL150N3LLH5
N-channel 30 V, 0.0014 Ohm typ., 35 A STripFET(TM) V Power MOSFET in PowerFLAT(TM) 5x6 package
Beschreibungen
Beschreibungen von Infineon IRF6716MTR1PBF, die von den Distributoren bereitgestellt werden.
Power Field-Effect Transistor, 180A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 39 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
Mosfet IC; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:25V; Continuous Drain Current, Id:39A; On Resistance, Rds(on):1.2mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:MX ;RoHS Compliant: Yes
MOSFET, N, DIRECTFET, 25V, MX; Transistor Polarity:N Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:25V; On Resistance Rds(on):1.2mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:1.9V; Transistor Case Style:MX; No. of Pins:5; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Base Number:6716; Current Id Max:39A; Package / Case:MX; Power Dissipation Pd:3.6mW; Pulse Current Idm:320A; SMD Marking:3.6; Termination Type:SMD; Voltage Vds:25V; Voltage Vds Typ:25V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.4V; Voltage Vgs th Min:1.4V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
MountSurface Mount
Number of Pins5
Number of Terminals3
Technical
Continuous Drain Current (ID)180 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance1.6 mΩ
Drain to Source Voltage (Vdss)25 V
Dual Supply Voltage25 V
Fall Time41 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.15 nF
Max Operating Temperature150 °C
Max Power Dissipation78 W
Min Breakdown Voltage25 V
Min Operating Temperature-40 °C
Nominal Vgs1.9 V
Number of Elements1
Rds On Max1.6 mΩ
Recovery Time36 ns
Resistance1.6 MΩ
Rise Time105 ns
TerminationSMD/SMT
Threshold Voltage1.9 V
Turn-Off Delay Time25 ns
Turn-On Delay Time26 ns
Dimensions
Height508 µm
Length5.45 mm
Width5.05 mm
Compliance
Umweltklassifizierung
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen