Infineon IRF6629TR1PBF
$ 3.01
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF6629TR1PBF | 0 | 1K | Bulk | 9h | |||||||
| Farnell | IRF6629TR1PBF | 0 | 1 | 7h | ||||||||
| Win Source | WS-IRF6629TR1PBF | 4.000 | 45 | 21h | ||||||||
| Worldway Electronics | IRF6629TR1PBF | 9.305 | 7 | Tape & Reel | 2d | |||||||
| ICPartonline | IRF6629TR1PBF | 5.766 | >1wk |
Datenblätter und Dokumente
Laden Sie Datenblätter und Herstellerdokumentation für Infineon IRF6629TR1PBF herunter.
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-07-11
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-06-20
LTD Date2014-12-20
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Beschreibungen
Beschreibungen von Infineon IRF6629TR1PBF, die von den Distributoren bereitgestellt werden.
Trans MOSFET N-CH 25V 29A 7-Pin Direct-FET MX T/R
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:25V; Continuous Drain Current, Id:23A; On Resistance, Rds(on):2.1mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET MX ;RoHS Compliant: Yes
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes optimized with low on resistance for applications such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number
MOSFET, N, DIRECTFET, MX; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:25V; On Resistance Rds(on):2.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Transistor Case Style:MX; No. of Pins:5; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:1170mJ; Base Number:6629; Cont Current Id @ 70°C:23; Current Id Max:23A; Fall Time tf:7.4ns; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-40°C; Package / Case:MX; Power Dissipation Pd:2.8mW; Pulse Current Idm:230A; Rise Time:67ns; Storage Temperature Max:150°C; Storage Temperature Min:-40°C; Termination Type:SMD; Voltage Vds:25V; Voltage Vds Typ:25V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
MountSurface Mount
Number of Pins5
Number of Terminals3
Technical
Continuous Drain Current (ID)29 A
Current Rating29 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance2.1 mΩ
Drain to Source Voltage (Vdss)25 V
Dual Supply Voltage25 V
Fall Time7.4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.26 nF
Max Operating Temperature150 °C
Max Power Dissipation100 W
Min Breakdown Voltage25 V
Min Operating Temperature-40 °C
Nominal Vgs1.8 V
Number of Elements1
Power Dissipation100 W
Rds On Max2.1 mΩ
Resistance2.1 MΩ
Rise Time67 ns
TerminationSMD/SMT
Threshold Voltage1.8 V
Turn-Off Delay Time20 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)25 V
Dimensions
Height506 µm
Width5.05 mm
Datenblätter und Dokumente
Laden Sie Datenblätter und Herstellerdokumentation für Infineon IRF6629TR1PBF herunter.
Compliance
Umweltklassifizierung
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen