Infineon IRF6617TRPBF
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF6617TRPBF | 0 | 4800 | Bulk | 19h | |||||||
| Farnell | IRF6617TRPBF | 0 | 1 | Cut Tape | 2h | |||||||
| Microchip USA | IRF6617TRPBF | 243 | 600 | Bulk | 20h | |||||||
| Weyland Electronics Group Pte. Ltd. | IRF6617TRPBF | 4.800 | 1 | Tape & Reel | 1d | |||||||
| Win Source | WS-IRF6617TRPBF | 18.484 | 60 | 3h |
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-03-12
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2023-03-31
LTD Date2023-09-30
Verwandte Teile
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Beschreibungen
Beschreibungen von Infineon IRF6617TRPBF, die von den Distributoren bereitgestellt werden.
Single N-Channel 30 V 8.1 mOhm 17 nC HEXFET® Power Mosfet - DirectFET®
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET package rated at 52 amperes., MG-WDSON-5, RoHS
Infineon SCT
Trans MOSFET N-CH Si 30V 14A 7-Pin Direct-FET ST T/R
MOSFET Devices; INFINEON; IRF6617TRPBF; 30 V; 14 A; 20 V; 2.1 W
N CH MOSFET, 30V, 14A, DIRECTFET ST
Power Field-Effect Transistor, 55A I(D), 30V, 0.0081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET 30V 1 N-CH HEXFET 8.1mOhms 11nC
IRF6617 - 12V-300V N-CHANNEL POW
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:14A; On Resistance Rds(On):0.0062Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.35V Rohs Compliant: Yes
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
MountSurface Mount
Number of Pins5
Number of Terminals3
Technical
Continuous Drain Current (ID)14 A
Current Rating14 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance8.1 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time3.7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.3 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation42 W
Manufacturer Package IdentifierMG-WDSON-5
Min Breakdown Voltage30 V
Min Operating Temperature-40 °C
Nominal Vgs2.35 V
Number of Channels1
Number of Elements1
On-State Resistance8.1 mΩ
Package Quantity4800
PackagingTape & Reel
Power Dissipation2.1 W
Rds On Max8.1 mΩ
Rise Time34 ns
Schedule B8541290080
Threshold Voltage2.35 V
Turn-Off Delay Time12 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)30 V
Dimensions
Height620 µm
Length3.95 mm
Width3.95 mm
Compliance
Umweltklassifizierung
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen