Infineon IRF5801TRPBF
$ 0.198
Production
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | IRF5801TRPBF | 15.825 | 1 | |||||||||
| Future Electronics | IRF5801TRPBF | 36.000 | 3K | Tape & Reel | ||||||||
| Rochester Electronics | IRF5801TRPBF | 12.000 | 10h | |||||||||
| DigiKey | IRF5801TRPBFCT-ND | 6.123 | 1 | Cut Tape | ||||||||
| Newark | IRF5801TRPBF | 0 | 5 | Cut Tape |
Bestandsverlauf
3-Monats-Trend: -7.47%
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CAD-Modelle
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Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-11-20
Lifecycle StatusProduction (Last Updated: 2 weeks ago)
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Beschreibungen
Beschreibungen von Infineon IRF5801TRPBF, die von den Distributoren bereitgestellt werden.
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 2.2 Ohms;ID 0.6A;TSOP-6;PD 2W;VGS +/-30V
200V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package, TSOP6L, RoHS
Infineon SCT
Single N-Channel 200 V 2.2 Ohm 3.9 nC HEXFET® Power Mosfet - SC-74
Trans MOSFET N-CH 200V 0.6A 6-Pin TSOP T/R
HEXFET SMPS POWER MOSFET Power Field-Effect Transistor, 0.6A I(D), 200V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA
MOSFET, N, 200V, TSOP-6; Transistor Polarity:N Channel; Continuous Drain Current Id:600mA; Drain Source Voltage Vds:200V; On Resistance Rds(on):2.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TSOP; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Application Code:SMPS; Cont Current Id @ 25°C:600mA; Cont Current Id @ 70°C:0.48; Current Id Max:600mA; Junction to Case Thermal Resistance A:62.5°C/W; Package / Case:TSOP; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:4.8A; Termination Type:SMD; Voltage Vds:200V; Voltage Vds Typ:200V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 600 / Drain-Source Voltage (Vds) V = 200 / ON Resistance (Rds(on)) Ohm = 2.2 / Gate-Source Voltage V = 30 / Fall Time ns = 19 / Rise Time ns = 8 / Turn-OFF Delay Time ns = 8.8 / Turn-ON Delay Time ns = 6.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TSOP6 / Pins = 6 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 2
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Bestandsverlauf
3-Monats-Trend: -7.47%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
Alternative Teile
0 Teile verfügbar
Technische Spezifikationen
Physical
Case/PackageSOT-23-6
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)600 mA
Current Rating600 mA
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance2.2 Ω
Drain to Source Voltage (Vdss)200 V
Dual Supply Voltage200 V
Element ConfigurationSingle
Fall Time19 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance88 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs5.5 V
Number of Channels1
Number of Elements1
On-State Resistance2.2 Ω
Package Quantity3000
PackagingTape & Reel
Power Dissipation2 W
Rds On Max2.2 Ω
Resistance2.2 Ω
Rise Time8 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage5.5 V
Turn-Off Delay Time8.8 ns
Turn-On Delay Time6.5 ns
Voltage Rating (DC)200 V
Dimensions
Height1.45 mm
Length2.9972 mm
Width1.7 mm
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Lead FreeContains Lead
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen