onsemi FDC6303N
$ 0.197
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Lieferkette
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-06-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Beschreibungen
Beschreibungen von onsemi FDC6303N, die von den Distributoren bereitgestellt werden.
Transistor MOSFET Array Dual N-CH 25V 0.68A 6-Pin TSOT-23 T/R
Avnet Japan
onsemi NChannel EnhancedMOSTube, Vds=25 V, 680 mA, SOT-23encapsulation, surface mount, 6Pin
DIGITAL FET, DUAL N-CHANNEL Small Signal Field-Effect Transistor, 0.68A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Chip Resistor - Surface Mount 75mOhm Wide 1206 (3216 Metric), 0612 ±1% 0/ +150ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ Res Thick Film 1206 0.075 Ohm 1% 1W 0ppm/C to 150ppm/C Molded SMD Punched Carrier T/R
MOSFET, DUAL, N, SMD, SUPERSOT-6; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:900mW; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:680mA; Current Id Max:680mA; Drain Source Voltage Vds:25V; Module Configuration:Dual; On Resistance Rds(on):450mohm; Package / Case:SuperSOT-6; Power Dissipation Pd:900mW; Termination Type:SMD; Voltage Vds Typ:25V; Voltage Vgs Max:800mV; Voltage Vgs Rds on Measurement:4.5V
These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this one N-Channel FET can replace several digital transistors with different bias resistors like the IMHxA series.
Aliasnamen des Herstellers
onsemi verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. onsemi ist möglicherweise auch unter den folgenden Namen bekannt:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
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Technische Spezifikationen
Physical
Case/PackageSOT-23-6
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight36 mg
Technical
Continuous Drain Current (ID)680 mA
Current Rating680 mA
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance450 mΩ
Drain to Source Voltage (Vdss)25 V
Dual Supply Voltage25 V
Element ConfigurationDual
Fall Time13 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance50 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation900 mW
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Nominal Vgs800 mV
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation700 mW
Rds On Max450 mΩ
Resistance450 mΩ
Rise Time8.5 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage800 mV
Turn-Off Delay Time17 ns
Turn-On Delay Time3 ns
Voltage Rating (DC)25 V
Dimensions
Height1.1 mm
Length3 mm
Width1.7 mm
Compliance
Umweltklassifizierung
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen