Infineon IRF540ZSTRLPBF
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF540ZSTRLPBF | 0 | 3200 | Bulk | 11h | |||||||
| Farnell | IRF540ZSTRLPBF | 0 | 1 | Cut Tape | 15h | |||||||
| Win Source | WS-IRF540ZSTRLPBF | 15 | 5 | 21h | ||||||||
| Worldway Electronics | IRF540ZSTRLPBF | 15.310 | 7 | Tape & Reel | 20h | |||||||
| IC Components Ltd. | IRF540ZSTRLPBF | 3.810 | 6d |
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2002-05-10
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2019-11-15
LTD Date2020-05-15
Verwandte Teile
STMicroelectronicsSTB35NF10T4
N-Channel 100V - 0.030 Ohm - 40A - D2PAK LOW GATE CHARGE StripFET(TM) POWER MOSFET
InfineonIRF1310NSPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.036Ohm;ID 42A;D2Pak;PD 160W;VGS +/-20V
InfineonIRF1310NSTRLPBF
Single N-Channel 100 V 160 W 110 nC Hexfet Power Mosfet Surface Mount - D2PAK
STMicroelectronicsSTB40NF10LT4
N-CHANNEL 100V 0.028 OHM 40A D2PAK LOW GATE CHARGE STripFET MOSFET
Beschreibungen
Beschreibungen von Infineon IRF540ZSTRLPBF, die von den Distributoren bereitgestellt werden.
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 21Milliohms;ID 36A;D2Pak;PD 92W;VGS +/-20V
IRF540xx Series 100 V 26.5 mOhm 36 A HEXFET® Power MOSFET - D²PAK (TO-263AB)
100V Single N-Channel HEXFET Power MOSFET in a D2Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH Si 100V 36A 3-Pin(2+Tab) D2PAK T/R
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
HEXFET POWER MOSFET Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:36A; On Resistance, Rds(on):26.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)36 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance26.5 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time39 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.77 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation92 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance26.5 mΩ
Package Quantity800
Power Dissipation92 W
Rds On Max26.5 mΩ
Rise Time51 ns
Schedule B8541290080
Turn-Off Delay Time43 ns
Turn-On Delay Time15 ns
Dimensions
Height4.826 mm
Length10.668 mm
Width9.65 mm
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen