Infineon IRF3710ZLPBF
$ 4.83
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Vertriebspartner
SKU
Min.
Verpackung
Staffelpreise
Lieferkette
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-05-10
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2019-11-15
LTD Date2020-05-15
Verwandte Teile
InfineonIRFSL4510PBF
MOSFET N-CH 100V 61A TO262 N-Channel 100 V 61A (Tc) 140W (Tc) Through Hole TO-262
Beschreibungen
Beschreibungen von Infineon IRF3710ZLPBF, die von den Distributoren bereitgestellt werden.
Single N-Channel 100 V 18 mOhm 120 nC HEXFET® Power Mosfet - TO-262
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
MOSFET N-CH 100V 59A TO262 N-Channel 100 V 59A (Tc) 160W (Tc) Through Hole TO-262
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:59A; On Resistance, Rds(on):18mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)59 A
Current Rating59 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance18 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time56 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.9 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation160 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance18 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation160 W
Rds On Max18 mΩ
Rise Time77 ns
Schedule B8541290080
Turn-Off Delay Time41 ns
Turn-On Delay Time17 ns
Voltage Rating (DC)100 V
Dimensions
Height15.095 mm
Length10.668 mm
Width4.826 mm
Compliance
Umweltklassifizierung
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen