Infineon IRF2807ZPBF

MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 7.5Milliohms;ID 89A;TO-220AB;PD 170W;-55deg

Single N-Channel 75 V 9.4 mOhm 110 nC HEXFET® Power Mosfet - TO-220-3

75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Advanced Process Technology | MOSFET N-CH 75V 75A TO-220AB

Trans MOSFET N-CH 75V 89A 3-Pin(3+Tab) TO-220AB

Power Field-Effect Transistor, 75A I(D), 75V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Mosfet, N-Ch, 75V, 89A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:89A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon Technologies IRF2807ZPBF

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

MOSFET, N, 75V, 89A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:89A; Drain Source Voltage Vds:75V; On Resistance Rds(on):9.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:170W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:75A; Junction to Case Thermal Resistance A:0.9°C/W; On State resistance @ Vgs = 10V:9.4ohm; Package / Case:TO-220AB; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:350A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V