Infineon IPW65R280C6FKSA1

Transistor MOSFET N-CH 700V 13.8A 3-Pin TO-247 Tube
$ 1.19
Obsolete
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Datasheet19 SeitenVor 15 Jahren

element14 APAC

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Lieferkette

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-08-19
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2018-08-31
LTD Date2019-02-28

Verwandte Teile

MOSFET Transistor, N Channel, 13.8 A, 600 V, 0.252 ohm, 10 V, 4 V
MOSFET N-CH 600V 16.8A TO247-3 / N-Channel 600 V 16.8A (Tc) 126W (Tc) Through Hole PG-TO247-3
STMicroelectronicsSTW18N65M5
N-channel 650 V, 0.198 Ohm typ., 15 A MDmesh(TM) V Power MOSFET in TO-247 package
STMicroelectronicsSTW19NM50N
N-channel 500 V, 0.2 Ohm, 14 A MDmesh(TM) II Power MOSFET in TO-247
104.2W(Tc) 20V 4.5V@ 440¦ÌA 41nC@ 10 V 1N 650V 310m¦¸@ 4.4A,10V 11.4A 1.1nF@100V TO-247 21.1mm
STMicroelectronicsSTW18NM60N
N-channel 600 V, 0.26 Ohm typ., 13 A MDmesh(TM) II Power MOSFET in TO-247

Beschreibungen

Beschreibungen von Infineon IPW65R280C6FKSA1, die von den Distributoren bereitgestellt werden.

Transistor MOSFET N-CH 700V 13.8A 3-Pin TO-247 Tube
Avnet Japan
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO247-3, RoHS
Infineon SCT
Mosfet, N-Ch, 650V, 13.8A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:13.8A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.25Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

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