Beschreibungen von Infineon IPD60R400CEAUMA1, die von den Distributoren bereitgestellt werden.
Power MOSFET, N Channel, 600 V, 14.7 A, 0.34 ohm, TO-252 (DPAK), Surface Mount
Trans MOSFET N-CH 600V 10.3A 3-Pin(2+Tab) DPAK T/R, PG-TO252-3, RoHS
Infineon SCT
112W 20V 3.5V 32nC@ 10V 2N 650V 400m¦¸@ 10V,3.8A 14.7A 700pF@100V TDSON-8,TO-252
IPD60R400CE Series 600 V 14.7 A 0.4 Ohm Single N-Channel MOSFET - TO-252-3
600V 14.7A 400m惟@10V,3.8A 112W 3.5V@300uA 1 N-Channel TO-252-3 MOSFETs ROHS
Power Field-Effect Transistor, 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Infineon MOSFET IPD60R400CEAUMA1
Very high commutation ruggedness
IPD60R400 - 600V COOLMOS N-CHANN
MOSFET, N-CH, 600V, 14.7A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 14.7A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.34ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 112W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS CE Series; Automotive Qualification Standard: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (27-Jun-2018)
Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV