Infineon IPB65R190C7ATMA1

Trans MOSFET N-CH 650V 13A 3-Pin(2+Tab) D2PAK T/R

Power Field-Effect Transistor, 13A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-263AB

MOSFET, N-CH, 650V, 13A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.168ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V;

Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO263-3, RoHS

Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power