Infineon BCV61CE6327HTSA1

BCV61 Series NPN 30 V 100 mA SMT Silicon Double Transistor - SOT-143-4
$ 0.36
EOL
HerstellerseiteDatenblatt

Preis und Lagerbestand

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DistributorSKUMinPkg
Newark
2
BCV61CE6327HTSA17.9335Cut Tape
Rochester ElectronicsBCV61CE6327HTSA1764.560
19h
AvnetBCV61CE6327HTSA109K
22h
Future Electronics
2
BCV61CE6327HTSA103KTape & Reel
Arrow ElectronicsBCV61CE6327HTSA109K

Datenblätter und Dokumente

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IHS

Datasheet7 SeitenVor 14 Jahren

Farnell

iiiC

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Alternative Teile

Dieser Teil
Alternative Teile
InfineonBCV61CE6327HTSA1
NexperiaBCV61C,215
Price @ 1000
$ 0.36
$ 0.348
Stock
3,044,011
1,459,879
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
SOT-143-4
TO-253-4
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
30 V
30 V
Max Collector Current
100 mA
100 mA
Transition Frequency
250 MHz
100 MHz
Collector Emitter Saturation Voltage
-
600 mV
hFE Min
420
110
Power Dissipation
300 mW
250 mW

Lieferkette

Country of OriginAustria, Mainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1991-05-01
Lifecycle StatusEOL (Last Updated: 4 months ago)
LTB Date2015-10-15
LTD Date2016-10-15

Verwandte Teile

NexperiaBCV61C,215
Bipolar Transistor Array, Dual NPN, 30 V, 100 mA, 250 mW, 420 hFE, SOT-143B, 4 Pins
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RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, L Band, Silicon, NPN, TO-236AB
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NXP SemiconductorsBFU530R
Trans RF BJT NPN 16V 0.065A 450mW Automotive 4-Pin(3+Tab) SOT-143B T/R
Details
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RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, L Band, Silicon, NPN
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NXP SemiconductorsBFU520XAR
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, L Band, Silicon, NPN
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NXP SemiconductorsBFU530XAR
RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN
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Beschreibungen

Beschreibungen von Infineon BCV61CE6327HTSA1, die von den Distributoren bereitgestellt werden.

BCV61 Series NPN 30 V 100 mA SMT Silicon Double Transistor - SOT-143-4
Future Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
IHS
Dual Transistor BJT NPN 30V 0.1A SOT143
RS APAC
Trans GP BJT NPN 30V 0.1A 4-Pin SOT-143 T/R
Avnet
; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:30V; Continuous Collector Current, Ic:100mA; Collector Emitter Saturation Voltage, Vce(sat):0.6V; Power Dissipation, Pd:300mW; DC Current Gain Min (hfe):110 ;RoHS Compliant: Yes
Newark
NPN Silicon Double Transistor | Summary of Features: To be used as a current mirror; Good thermal coupling and VBE matching; High current gain; Low collector-emitter saturation voltage; Pb-free (RoHS compliant) package; Qualified according AEC Q102 | Target Applications: For current mirror applications
Infineon
Transistor Polarity = NPN / Channels = 2 / Continuous Collector Current (Ic) mA = 100 / Collector-Emitter Voltage (Vceo) V = 30 / DC Current Gain (hFE) = 520 / Collector-Base Voltage (Vcbo) V = 30 / Emitter-Base Voltage (Vebo) V = 6 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 250 / Power Dissipation (Pd) mW = 300 / Package Type = SOT-143 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Length mm = 2.9 / Width mm = 1.3 / Height mm = 1 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 200 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 900
Distrelec
TRANSISTOR, DUAL, NPN, SOT-143; Module Configuration:Dual; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Power Dissipation Pd:300mW; DC Collector Current:100mA; DC Current Gain hFE:520; Transistor Case Style:SOT-143; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:600mV; Continuous Collector Current Ic Max:100mA; Current Ic @ Vce Sat:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; External Depth:2.6mm; External Length / Height:1mm; External Width:2.9mm; Gain Bandwidth ft Typ:250MHz; Hfe Min:110; No. of Transistors:2; Package / Case:SOT-143; Pin Configuration:a; Power Dissipation Pd:300mW; Power Dissipation Ptot Max:300mW; SMD Marking:1Ls; Termination Type:SMD; Voltage Vcbo:30V
element14 APAC

Bilder

Infineon
Augswan
RS
Distrelec
Newark
Future Electronics
TME
LZChips
iiiC

Aliasnamen des Herstellers

Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Aliasnamen für Teilnummern

Dieses Teil ist möglicherweise auch unter diesen alternativen Teilenummern bekannt:

  • BCV 61C
  • BCV 61C E6327
  • BCV-61C-E6327
  • BCV61C
  • BCV61C E6327
  • BCV61C-E6327
  • BCV61C.
  • BCV61CE-6327
  • BCV61CE6327
  • SP000010887