Infineon AUIRL3705ZS
$ 1.14
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Vertriebspartner
SKU
Min.
Verpackung
Staffelpreise
Alternative Teile
Dieser Teil
Alternative Teile
Price @ 1000
$ 1.14
$ 2.243
$ 2.243
Stock
148,125
324,868
324,868
Authorized Distributors
2
2
2
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
55 V
55 V
55 V
Continuous Drain Current (ID)
75 A
75 A
75 A
Threshold Voltage
-
-
-
Rds On Max
8 mΩ
8 mΩ
8 mΩ
Gate to Source Voltage (Vgs)
16 V
16 V
16 V
Power Dissipation
130 W
130 W
130 W
Input Capacitance
2.88 nF
2.88 nF
2.88 nF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-12-09
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2021-08-15
LTD Date2022-02-15
Verwandte Teile
InfineonIRF1010ZSPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 5.8Milliohms;ID 75A;D2Pak;PD 140W;VGS +/-20
InfineonIPB80N06S208ATMA2
55V, N-Ch, 7.7 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™, PG-TO263-3, RoHS
Beschreibungen
Beschreibungen von Infineon AUIRL3705ZS, die von den Distributoren bereitgestellt werden.
Single N-Channel 55 V 8 mOhm 40 nC Automotive HEXFET® Power Mosfet - D2PAK
Trans MOSFET N-CH 55V 86A Automotive 3-Pin(2+Tab) D2PAK Tube
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package
130W(Tc) 16V 3V@ 250¦ÌA 60nC@ 5 V 1N 55V 8m¦¸@ 52A,10V 86A 2.88nF@25V D2PAK 10mm*9.25mm*4.4mm
AUTOMOTIVE GRADE HEXFET POWER MOSFET Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET,W DIODE,N CH,55V,75A,D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:86A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0065ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:130W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Voltage Vgs Max:16V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance8 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time83 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance2.88 nF
Max Operating Temperature175 °C
Max Power Dissipation130 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation130 W
Rds On Max8 mΩ
Resistance8 MΩ
Rise Time240 ns
Turn-Off Delay Time26 ns
Turn-On Delay Time17 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width9.65 mm
Compliance
Umweltklassifizierung
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen