Infineon AUIRFS4010TRL
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Vertriebspartner
SKU
Min.
Verpackung
Staffelpreise
Alternative Teile
Dieser Teil
Alternative Teile
Price @ 1000
$ 1.336
$ 1.336
Stock
141,514
730,038
730,038
Authorized Distributors
0
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
100 V
100 V
100 V
Continuous Drain Current (ID)
180 A
180 A
180 A
Threshold Voltage
-
-
-
Rds On Max
4.7 mΩ
4.7 mΩ
4.7 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
375 W
375 W
375 W
Input Capacitance
9.575 nF
9.575 nF
9.575 nF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-08-16
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2024-02-29
LTD Date2024-08-31
Verwandte Teile
InfineonIRFS4010TRLPBF
Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 100V 180A D2PAK
InfineonIRFS4010TRRPBF
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
InfineonIRFS4010PBF
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
onsemiFDB035N10A
Power MOSFET, N Channel, 100 V, 214 A, 0.0035 ohm, TO-263 (D2PAK), Surface Mount
Beschreibungen
Beschreibungen von Infineon AUIRFS4010TRL, die von den Distributoren bereitgestellt werden.
Trans MOSFET N-CH 100V 180A Automotive 3-Pin(2+Tab) D2PAK T/R
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-PAK Package
Power Field-Effect Transistor, 180A I(D), 100V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)180 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance4.7 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time77 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance9.575 nF
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
Package Quantity800
PackagingTape & Reel (TR)
Power Dissipation375 W
Rds On Max4.7 mΩ
Rise Time86 ns
Turn-Off Delay Time100 ns
Turn-On Delay Time21 ns
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen