Infineon AUIRF3805
$ 1.47
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Vertriebspartner
SKU
Min.
Verpackung
Staffelpreise
Alternative Teile
Dieser Teil
Alternative Teile
Price @ 1000
$ 1.47
$ 1.98
Stock
273,016
749,740
Authorized Distributors
2
6
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220-3
Drain to Source Voltage (Vdss)
55 V
55 V
Continuous Drain Current (ID)
160 A
75 A
Threshold Voltage
2 V
4 V
Rds On Max
3.3 mΩ
3.3 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
300 W
130 W
Input Capacitance
7.96 nF
7.96 nF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-07-20
Lifecycle StatusObsolete (Last Updated: 5 months ago)
Verwandte Teile
STMicroelectronicsSTP185N55F3
N-channel 55 V, 3.2 mOhm typ., 120 A STripFET(TM) Power MOSFET in TO-220 package
onsemiFDP030N06B-F102
Single N-Channel 60 V 3.1 mOhm 99 nC 205 W Flange Mount Mosfet - TO-220-3
STMicroelectronicsSTP190N55LF3
N-channel 55 V, 2.9 mOhm typ., 120 A STripFET(TM) Power MOSFET in a TO-220 package
InfineonAUIRL1404Z
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS
Beschreibungen
Beschreibungen von Infineon AUIRF3805, die von den Distributoren bereitgestellt werden.
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS
Infineon SCT
Single N-Channel 55 V 3.3 mOhm 290 nC Automotive HEXFET® Power Mosfet - TO-220-3
Trans MOSFET N-CH Si 55V 210A Automotive AEC-Q101 3-Pin(3+Tab) TO-220AB Tube
HEXFET POWER MOSFET Power Field-Effect Transistor, 160A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
MOSFET,N CH,55V,160A,TO220AB; Continuous Drain Current Id:210A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:300W; Transistor Case Style:TO-2220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Pd:300W; Voltage Vgs Max:20V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)160 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance3.3 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time87 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.96 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance3.3 mΩ
Package Quantity1000
Power Dissipation300 W
Rds On Max3.3 mΩ
Resistance3.3 MΩ
Rise Time20 ns
Threshold Voltage2 V
Turn-Off Delay Time93 ns
Turn-On Delay Time150 ns
Dimensions
Height20.57 mm
Length10.66 mm
Width4.82 mm
Compliance
Umweltklassifizierung
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen