Diodes Inc. ZXMN6A25N8TA
$ 0.492
Production
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TME | ZXMN6A25N8TA | 0 | 500 | 9h | ||||||||
| Future Electronics | ZXMN6A25N8TA | 0 | 500 | Tape & Reel | ||||||||
| Avnet | ZXMN6A25N8TA | 0 | 500 | 13h | ||||||||
| Component Stockers USA | ZXMN6A25N8TA | 9.270 | 1d | |||||||||
| Win Source | WS-ZXMN6A25N8TA | 90.050 | 120 | 11h |
Lieferkette
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-05-08
Lifecycle StatusProduction (Last Updated: 5 months ago)
Verwandte Teile
VishaySI4946BEY-T1-GE3
SI4946BEY-T1-GE3 DUAL N-CHANNEL MOSFET TRANSISTOR, 6.5 A, 60 V, 8-PIN SOIC
Diodes Inc.ZXMN6A25DN8TA
ZXMN6A25 Series 60 V 0.5 Ohm Dual N-Channel Enhancement Mode MOSFET - SOIC-8
Diodes Inc.ZXMC4559DN8TA
ZXMC4559DN8 Series 60 V 0.55 Ohm Dual N/P-Channel Enhancement Mode MOSFET SOIC-8
Beschreibungen
Beschreibungen von Diodes Inc. ZXMN6A25N8TA, die von den Distributoren bereitgestellt werden.
N-Channel 60 V 0.05 Ohm Power MOSFET Surface Mount - SOIC-8
Trans MOSFET N-CH 60V 5.7A 8-Pin SOIC T/R
60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
Diodes Inc SCT
Power Field-Effect Transistor, 4.3A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Aliasnamen des Herstellers
Diodes Inc. verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Diodes Inc. ist möglicherweise auch unter den folgenden Namen bekannt:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Technische Spezifikationen
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight73.992255 mg
Technical
Continuous Drain Current (ID)4.3 A
Drain to Source Resistance50 mΩ
Drain to Source Voltage (Vdss)60 V
Fall Time10.6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.063 nF
Max Operating Temperature150 °C
Max Power Dissipation4.14 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.8 W
Rds On Max50 mΩ
Resistance50 mΩ
Rise Time4 ns
Turn-Off Delay Time26.2 ns
Turn-On Delay Time3.8 ns
Dimensions
Height1.5 mm
Length5 mm
Width4 mm
Compliance
Umweltklassifizierung
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen