Diodes Inc. ZXMN10A09KTC
$ 0.959
Production
Preis und Lagerbestand
Autorisierte Distributoren
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Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | ZXMN10A09KTC | 1.767 | 1 | Cut Tape | ||||||||
| Arrow Electronics | ZXMN10A09KTC | 2.500 | 2500 | |||||||||
| Verical | ZXMN10A09KTC | 2.500 | 2500 | |||||||||
| DigiKey | ZXMN10A09KCT-ND | 813 | 1 | Cut Tape | ||||||||
| TME | ZXMN10A09KTC | 0 | 1 | 7h |
Bestandsverlauf
3-Monats-Trend: -0.13%
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Lieferkette
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-02-17
Lifecycle StatusProduction (Last Updated: 4 months ago)
Verwandte Teile
Diodes Inc.DMP10H400SK3-13
Single P-Channel 100 V 300 mOhm 8.4 nC 42 W Silicon SMT Mosfet - TO-252-3
InfineonIRFR120NPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.21Ohm;ID 9.4A;D-Pak (TO-252AA);PD 48W
InfineonIRFR120NTRPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.21Ohm;ID 9.4A;D-Pak (TO-252AA);PD 48W
Diodes Inc.ZXMP10A18KTC
Trans MOSFET P-CH 100V 3.8A 3-Pin(2+Tab) DPAK T/R / MOSFET P-CH 100V 3.8A DPAK
onsemiSFT1443-TL-W
Power Field-Effect Transistor, 9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Beschreibungen
Beschreibungen von Diodes Inc. ZXMN10A09KTC, die von den Distributoren bereitgestellt werden.
Mosfet, N-Ch, 100V, 5A, To-252 Rohs Compliant: Yes |Diodes Inc. ZXMN10A09KTC
MOSFET N-CH 100V 5A DPAK / Trans MOSFET N-CH 100V 5A 3-Pin(2+Tab) DPAK T/R
N-Channel 100 V 0.085 Ohm Enhancement Mode MOSFET -DPAK
2.15W(Ta) 20V 4V@ 250¦ÌA 26nC@ 10 V 1N 100V 85m¦¸@ 4.6A,10V 5A 1.313nF@50V TO-252-3 2.52mm
Power Field-Effect Transistor, 5A I(D), 100V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Aliasnamen des Herstellers
Diodes Inc. verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Diodes Inc. ist möglicherweise auch unter den folgenden Namen bekannt:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Bestandsverlauf
3-Monats-Trend: -0.13%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
Alternative Teile
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Technische Spezifikationen
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight3.949996 g
Technical
Continuous Drain Current (ID)5 A
Current Rating7.7 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance85 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time12.3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.313 nF
Max Operating Temperature150 °C
Max Power Dissipation4.3 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingCut Tape
Rds On Max85 mΩ
Resistance85 mΩ
Rise Time5.3 ns
Turn-Off Delay Time27.5 ns
Turn-On Delay Time6.8 ns
Voltage Rating (DC)100 V
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen