Diodes Inc. ZTX757

Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
$ 0.392
Production
HerstellerseiteDatenblatt

Preis und Lagerbestand

Alle Preisnachlässe anzeigen
DistributorSKUMinPkg
AvnetZTX75720.0004K
2d
NewarkZTX7573.8741
VericalZTX75716.0004K
DigiKeyZTX757-ND2.2971Bulk
TME
2
ZTX75701
21h

Datenblätter und Dokumente

Laden Sie Datenblätter und Herstellerdokumentation für Diodes Inc. ZTX757 herunter.

_legacy Avnet

Datasheet2 SeitenVor 19 Jahren

IHS

Newark

Diodes Inc SCT

Future Electronics

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Alternative Teile

Dieser Teil
Alternative Teile
Diodes Inc.ZTX757
Diodes Inc.ZTX757STZ
Price @ 1000
$ 0.392
$ 0.405
Stock
190,444
320,756
Authorized Distributors
6
6
Mount
Through Hole
Through Hole
Case/Package
TO-92
TO-92
Polarity
PNP
PNP
Collector Emitter Breakdown Voltage
300 V
300 V
Max Collector Current
500 mA
500 mA
Transition Frequency
30 MHz
30 MHz
Collector Emitter Saturation Voltage
500 mV
500 mV
hFE Min
50
50
Power Dissipation
-
-

Lieferkette

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1992-02-01
Lifecycle StatusProduction (Last Updated: 4 months ago)

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Beschreibungen

Beschreibungen von Diodes Inc. ZTX757, die von den Distributoren bereitgestellt werden.

Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
IHS
ZTX757 Series 300 V 0.5 A PNP Silicon Planar Medium Power Transistor - TO-92-3
Future Electronics
500mV@ 10mA,100mA PNP 1W 5V 100nA 300V 300V 500mA EP-3SC , 4.77mm*2.41mm*4.01mm
UnikeyIC
TRANSISTOR, PNP, E-LINE; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency Typ ft:30MHz; Power Dissipation Pd:1mW; DC Collector Current:500mA; DC Current Gain hFE:50; Operating Temperature Range:-55°C to +200°C; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:500mV; Continuous Collector Current Ic Max:500mA; Current Ic @ Vce Sat:100mA; Current Ic Continuous a Max:500mA; Current Ic hFE:100mA; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:30MHz; Gain Bandwidth ft Typ:30MHz; Hfe Min:50; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:1mW; Power Dissipation Ptot Max:1W; Termination Type:Through Hole; Voltage Vcbo:300V
element14 APAC

Bilder

element14
Future Electronics
element14
Component Sense
Distrelec

Aliasnamen des Herstellers

Diodes Inc. verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Diodes Inc. ist möglicherweise auch unter den folgenden Namen bekannt:

  • Diodes Incorporated
  • DIODE
  • DII
  • DIO
  • DIODE INC
  • DC COMPONENTS
  • DIOD
  • YENYO
  • Diodes Zetex
  • MICRO COM
  • MICRO ELECTRONIC INS
  • Diodes Inc / Zetex
  • DIODE INCORPORATED
  • DIODES ZET
  • DIODSE
  • DINC
  • Diodes Inc Inc
  • DIOINC
  • FORMOSA MS
  • DIODES INC(RoHS)
  • ZETEX (DIODES INC)
  • DIODES INC/VISHAY
  • Diodes Incorporation
  • ZETEXDIODES
  • DIODES INC/VISH
  • Pericom
  • Diodes Incorporated

Aliasnamen für Teilnummern

Dieses Teil ist möglicherweise auch unter diesen alternativen Teilenummern bekannt:

  • ZTX 757