Diodes Inc. ZTX1051A
$ 0.555
Production
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Bestandsverlauf
3-Monats-Trend: +60.05%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
Alternative Teile
0 Teile verfügbar
Lieferkette
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1995-02-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
Verwandte Teile
onsemiKSC2328AYTA
30V 1W 2A 120MHz 2V@1.5A30mA NPN +150¡Í@(Tj) TO-92-3LF Bipolar Transistors - BJT ROHS
Diodes Inc.ZTX690BSTZ
ZTX690B Series NPN 2 A 45 V Silicon Planar Medium Power Transistor - TO-92-3
onsemiKSD1616GBU
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 200 @ 100mA 2V 100nA ICBO 750mW 160MHz
onsemiKSD1616LBU
Bulk Through Hole NPN KSD1616 Bipolar (BJT) Transistor 300 @ 100mA 2V 1A 750mW 160MHz
Beschreibungen
Beschreibungen von Diodes Inc. ZTX1051A, die von den Distributoren bereitgestellt werden.
Bipolar (BJT) Transistor NPN 40V 4A 155MHz 1W Through Hole E-Line (TO-92 compati
Small Signal Bipolar Transistor, 4A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
210mV@ 100mA,4A NPN 1W 5V 10nA 150V 40V 4A TO-92 , 4.77mm*2.41mm*4.01mm
TRANSISTOR NPN 40V 5000MA TO92-3
TRANSISTOR, NPN, E-LINE; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:40V; Typ Gain Bandwidth ft:155MHz; Power Dissipation Pd:1W; DC Collector Current:4A; DC Current Gain hFE:450; Operating Temperature Range:-55°C ;RoHS Compliant: Yes
TRANSISTOR, NPN, E-LINE; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:1W; DC Collector Current:4A; DC Current Gain hFE:450; Operating Temperature Range:-55°C to +200°C; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:210mV; Continuous Collector Current Ic Max:4A; Current Ic @ Vce Sat:4A; Current Ic Continuous a Max:4A; Current Ic hFE:1A; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:155MHz; Hfe Min:300; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:1W; Power Dissipation Ptot Max:1W; Pulsed Current Icm:10A; Termination Type:Through Hole; Voltage Vcbo:150V
Aliasnamen des Herstellers
Diodes Inc. verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Diodes Inc. ist möglicherweise auch unter den folgenden Namen bekannt:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Bestandsverlauf
3-Monats-Trend: +60.05%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
Alternative Teile
0 Teile verfügbar
Technische Spezifikationen
Physical
Case/PackageTO-92
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight453.59237 mg
Technical
Collector Base Voltage (VCBO)150 V
Collector Emitter Breakdown Voltage40 V
Collector Emitter Voltage (VCEO)40 V
Continuous Collector Current4 A
Current Rating4 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency155 MHz
Gain Bandwidth Product155 MHz
hFE Min45
Max Collector Current4 A
Max Operating Temperature200 °C
Max Power Dissipation1 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation1 W
Schedule B8541290080
Transition Frequency155 MHz
Voltage Rating (DC)40 V
Dimensions
Height4.01 mm
Length4.77 mm
Width2.41 mm
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen