Diodes Inc. BC857BW-7-F
$ 0.042
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Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | BC857BW-7-F | 2.215 | 2215 | |||||||||
| Arrow Electronics | BC857BW-7-F | 2.215 | 2215 | |||||||||
| DigiKey | BC857BW-FDICT-ND | 2.430 | 1 | Cut Tape | ||||||||
| TME | BC857BW-7-F | 0 | 1 | 17h | ||||||||
| RS (Formerly Allied Electronics) | BC857BW-7-F | 0 | 50 | Bulk | 20h |
Bestandsverlauf
3-Monats-Trend: +155%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
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CAD-Modelle
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Price @ 1000
$ 0.042
$ 0.023
$ 0.023
Stock
4,025,210
3,001,585
3,001,585
Authorized Distributors
6
6
6
Mount
Surface Mount
-
-
Case/Package
SOT-323
SC
SC
Polarity
PNP
PNP
PNP
Collector Emitter Breakdown Voltage
45 V
45 V
45 V
Max Collector Current
100 mA
100 mA
100 mA
Transition Frequency
200 MHz
100 MHz
100 MHz
Collector Emitter Saturation Voltage
-650 mV
650 mV
650 mV
hFE Min
220
220
220
Power Dissipation
200 mW
150 mW
150 mW
Lieferkette
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-10-07
Lifecycle StatusProduction (Last Updated: 4 months ago)
Verwandte Teile
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Bipolar (BJT) Single Transistor, PNP, 45 V, 100 mA, 200 mW, SOT-323, Surface Mount
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
ROHMDTA123JUAT106
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
ROHMDTA123EUAT106
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
Diodes Inc.BC857AW-7-F
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
onsemiFJX4002RTF
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 200mW Surface Mount SOT-323
Beschreibungen
Beschreibungen von Diodes Inc. BC857BW-7-F, die von den Distributoren bereitgestellt werden.
Bipolar Transistors - BJT BIPOLAR TRANSISTOR PNP SOT-323
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
BC857BW Series PNP 45 V 200 mW Small Signal Surface Mount Transistor-SC-70-3
General Purpose Transistors PNP Ic=100mA Vceo=45V hfe=220~475 P=200mW SOT323
TRANSISTOR, PNP, SOT323; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -45V; Transition Frequency ft: 200MHz; Power Dissipation Pd: 200mW; DC Collector Current: -100mA; DC Current Gain hFE: 290hFE; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): -650mV; Current Ic Continuous a Max: -100mA; Gain Bandwidth ft Typ: 200MHz; Hfe Min: 220; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal
Transistor, Pnp, Sot323; Transistor, Polaridad:Pnp; Tensión Colector Emisor V(Br)Ceo:-45V; Frecuencia De Transición Ft:200Mhz; Disipación De Potencia Pd:200Mw; Corriente De Colector Dc:-100Ma; Ganancia De Corriente Dc Hfe:290 |Diodes Inc. BC857BW-7-F
Aliasnamen des Herstellers
Diodes Inc. verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Diodes Inc. ist möglicherweise auch unter den folgenden Namen bekannt:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Bestandsverlauf
3-Monats-Trend: +155%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
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Technische Spezifikationen
Physical
Case/PackageSOT-323
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight6.010099 mg
Technical
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage45 V
Collector Emitter Saturation Voltage-650 mV
Collector Emitter Voltage (VCEO)45 V
Current Rating-100 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency200 MHz
Gain Bandwidth Product200 MHz
hFE Min220
Max Breakdown Voltage45 V
Max Collector Current100 mA
Max Frequency200 MHz
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
PolarityPNP
Power Dissipation200 mW
Schedule B8541210080
Transition Frequency200 MHz
Voltage Rating (DC)-65 V
Dimensions
Height1 mm
Length2.2 mm
Width1.35 mm
Compliance
Umweltklassifizierung
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen