价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | SI7461DP-T1-E3 | 6,000 | 3K | 23h | ||||||||
| Mouser | 781-SI7461DP-T1-E3 | 48,202 | 1 | Tape & Reel | ||||||||
| CoreStaff | ST63699869 | 2,990 | 1 | 14h | ||||||||
| Future Electronics | 2850014 | 120,000 | 3K | Tape & Reel | ||||||||
| Verical | SI7461DP-T1-E3 | 15,000 | 3K |
备用零件
Price @ 1000
$ 1.398
$ 1.31
Stock
974,854
683,612
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
SOIC
SOIC
Drain to Source Voltage (Vdss)
-60 V
-60 V
Continuous Drain Current (ID)
8.6 A
8.6 A
Threshold Voltage
-3 V
-3 V
Rds On Max
14.5 mΩ
14.5 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
1.9 W
1.9 W
Input Capacitance
-
-
相关零件
描述
由其分销商提供的 Vishay SI7461DP-T1-E3 的描述。
Single P-Channel 60 V 0.0145 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8
SI7461DP-T1-E3 P-channel MOSFET Transistor, 8.6 A, 60 V, 8-Pin SOIC | Siliconix / Vishay SI7461DP-T1-E3
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-60V; Continuous Drain Current, Id:-12.6A; On Resistance, Rds(on):0.19ohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:8-SOIC ;RoHS Compliant: Yes
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- VISHA
- Vishay Intertechnology
- Vishay Semiconductors
- VISAHY
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertech
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- VSHAY
- Vishay Semiconductor Opto Division
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight506.605978 mg
Technical
Continuous Drain Current (ID)8.6 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance14.5 mΩ
Drain to Source Voltage (Vdss)-60 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation5.4 W
Manufacturer Package IdentifierS17-0173-Single
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs-3 V
Number of Channels1
Number of Elements1
Power Dissipation1.9 W
Rds On Max14.5 mΩ
Resistance14.5 mΩ
Rise Time20 ns
Schedule B8541290080
Threshold Voltage-3 V
Turn-Off Delay Time205 ns
Turn-On Delay Time20 ns
Dimensions
Height1.17 mm
Length4.9 mm
Width5.89 mm