备用零件
Price @ 1000
$ 13.81
$ 32.25
Stock
6,064
76,680
Authorized Distributors
3
6
Mount
-
-
Case/Package
TO-247-3
TO-247-3
Drain to Source Voltage (Vdss)
1.2 kV
1.2 kV
Continuous Drain Current (ID)
81 A
103 A
Threshold Voltage
-
-
Rds On Max
-
-
Gate to Source Voltage (Vgs)
15 V
23 V
Power Dissipation
469 W
500 W
Input Capacitance
-
-
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2019-08-19
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusPRODUCTION (Last Updated: 5 years ago)
描述
由其分销商提供的 Wolfspeed C3M0021120D 的描述。
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode
Wolfspeed
469W(Tc) 19V 3.6V@17.7mA 160nC@ 15 V 2N 40V 5m¦¸@ 10V 70A 4.818nF@1000V TO-247-3 21.1mm
Discrete SiC MOSFET, 1200 V, 21 mΩ, 100 A, TO-247-3, RoHS
Wolfspeed SCT
Trans MOSFET N-CH SiC 1.2KV 100A 3-Pin(3+Tab) TO-247
MOSFET, N-CH, 1.2KV, 175DEG C, 469W ROHS COMPLIANT: YES
Power Field-Effect Transistor, 81A I(D), 1200V, 0.0288ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247
SICFET N-CH 1200V 100A TO247-3
制造商别名
Wolfspeed 在全球拥有多个品牌，分销商可将其用作替代名称。Wolfspeed 也可称为以下名称：
- Wolfspeed Inc
- Cree/Wolfspeed
- Wolfspeed - a Cree company
- Wolfspeed / Cree
- WOLFSPEED INC (CREE)
- WOLFSOn semi
技术规格
Physical
Case/PackageTO-247-3
Number of Terminals3
Technical
Continuous Drain Current (ID)81 A
Current Rating100 A
Drain to Source Breakdown Voltage1.2 kV
Drain to Source Resistance28.8 mΩ
Drain to Source Voltage (Vdss)1.2 kV
Gate to Source Voltage (Vgs)15 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation469 W
Min Breakdown Voltage1.2 kV
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
Power Dissipation469 W
Schedule B8541290080
Turn-Off Delay Time72 ns
Turn-On Delay Time142 ns
Dimensions
Height25.5 mm