备用零件
Price @ 1000
$ 1.225
$ 1.261
Stock
605,000
185,219
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
TO-252-3
Drain to Source Voltage (Vdss)
-100 V
-100 V
Continuous Drain Current (ID)
9.2 A
36.4 A
Threshold Voltage
-3 V
-
Rds On Max
1 Ω
43 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
8.3 W
6.9 W
Input Capacitance
700 pF
4.6 nF
供应链
Country of OriginIsrael
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-12-02
Lifecycle StatusProduction (Last Updated: 4 months ago)
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N-Channel 400V - 0.85 Ohm - 5.4A Zener-Protected SuperMESH(TM) POWER MOSFET
描述
由其分销商提供的 Vishay SUD50P10-43L-E3 的描述。
Single P-Channel 100 V 0.043 Ohm Surface Mount Power MosFet - TO-252-3
Power Field-Effect Transistor, 9.2A I(D), 100V, 0.043ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, P CH, -100V, -38A, TO-252AA; Transistor Polarity:P Channel; Continuous Drain Current Id:-38A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.036ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:136W; Operating Temperature Min:-50°C; Operating Temperature Max:175°C; Transistor Case Style:TO-252AA; No. of Pins:3; MSL:-
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)9.2 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance43 mΩ
Drain to Source Voltage (Vdss)-100 V
Element ConfigurationSingle
Fall Time100 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance700 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation136 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation8.3 W
Rds On Max1 Ω
Resistance43 mΩ
Rise Time160 ns
Schedule B8541290080
Threshold Voltage-3 V
Turn-Off Delay Time110 ns
Turn-On Delay Time15 ns
Dimensions
Height2.507 mm
Length6.73 mm
Width6.22 mm