备用零件
Price @ 1000
$ 1.32
$ 1.316
$ 1.316
Stock
1,130,251
1,044,625
1,044,625
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
DPAK
TO-252
TO-252
Drain to Source Voltage (Vdss)
-60 V
-60 V
-60 V
Continuous Drain Current (ID)
50 A
50 A
50 A
Threshold Voltage
-3 V
-3 V
-3 V
Rds On Max
15 mΩ
15 mΩ
15 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
3 W
2.5 W
2.5 W
Input Capacitance
4.95 nF
4.95 nF
4.95 nF
相关零件
VishaySUD50P04-08-GE3
Power MOSFET, P Channel, 40 V, 50 A, 8.1 MilliOhms, TO-252AA, 3 Pins, Surface Mount
描述
由其分销商提供的 Vishay SUD50P06-15L-E3 的描述。
Single P-Channel 60 V 0.015 Ohms Surface Mount Power Mosfet - TO-252
Trans MOSFET P-CH 60V 50A 3-Pin(2+Tab) DPAK - Tape and Reel (Alt: SUD50P06-15-GE3)
Power Field-Effect Transistor, 32A I(D), 25V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, P CH, -60V, -50A, TO-252AA; Transistor Polarity:P Channel; Continuous Drain Current Id:-50A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.012ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:136W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-252AA; No. of Pins:3; MSL:-
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)50 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance15 mΩ
Drain to Source Voltage (Vdss)-60 V
Element ConfigurationSingle
Fall Time175 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.95 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation136 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs-1 V
Number of Channels1
Number of Elements1
Power Dissipation3 W
Rds On Max15 mΩ
Resistance15 mΩ
Rise Time70 ns
Schedule B8541290080
Threshold Voltage-3 V
Turn-Off Delay Time175 ns
Turn-On Delay Time15 ns
Dimensions
Height2.52 mm
Length6.73 mm
Width6.22 mm