Vishay SQM40N10-30_GE3

Name: Vishay SQM40N10-30_GE3
Brand: Vishay
SKU: SQM40N10-30_GE3

Trans MOSFET N-CH 100V 40A Automotive 3-Pin(2+Tab) D2PAK T/R

$ 1.12

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Avnet		SQM40N10-30-GE3	0	800							22h
Farnell	3	SQM40N10-30_GE3	1,311	1	Cut Tape	3.162*	2.045*	1.453*	1.050*	1.050*	6h
element14 APAC	2	SQM40N10-30_GE3	1,311	1	Cut Tape	2.444*	1.817*	1.449*	1.143*	1.143*	9h
Mouser		781-SQM40N10-30_GE3	1,821	1	Tape & Reel	3.210	2.090	1.440	1.120	1.050
Win Source		WS-SQM40N10-30_GE3	3,000	35				1.369	1.112	1.112	21h

数据表和文档

下载 Vishay SQM40N10-30_GE3 的数据表和制造商文档。

IHS

Datasheet10 页8 年前

Newark

Farnell

element14 APAC

RS (Formerly Allied Electronics)

库存历史记录

3 个月趋势:

-0.54%

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2009-09-25

Lifecycle StatusObsolete (Last Updated: 5 months ago)

LTB Date2024-12-20

LTD Date2025-06-20

描述

由其分销商提供的 Vishay SQM40N10-30_GE3 的描述。

Trans MOSFET N-CH 100V 40A Automotive 3-Pin(2+Tab) D2PAK T/R

Verical

107W(Tc) 20V 3.5V@ 250¦ÌA 62nC@ 10 V 1N 100V 30m¦¸@ 15A,10V 40A 3.345nF@25V TO-263

UnikeyIC

Mosfet,N Channel,W Diode,100V,40A,To-263

Newark

Automotive N-Channel 100 V (D-S) 175 °C MOSFET

Jak Electronics

N-CHANNEL 100-V (D-S) 175C MOSFET

Vishay

N-CH 100V 40A 23mOhm TO263-3 RoHSconf

Rutronik

Power Field-Effect Transistor, 40A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

MOSFET,N CH,W DIODE,100V,40A,TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.023ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V;

Farnell