描述
由其分销商提供的 Vishay SIS990DN-T1-GE3 的描述。
Transistor MOSFET Array Dual N-CH 100V 12.1A 8-Pin PowerPAK 1212 T/R
Dual Mosfet, N-Ch, 100V, Powerpak 1212 Rohs Compliant: Yes |Vishay SIS990DN-T1-GE3
DUAL N-CHANNEL 100-V (D-S) MOSFET
MOSFET 100V Vds 20V Vgs PowerPAK 1212-8
Power Field-Effect Transistor, 12.1A I(D), 100V, 0.085ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
场效应管, MOSFET, N沟道, 100V, POWERPAK 1212;
N-CH POWERPAK1212 BWL 30V 2.2MOHM@10V
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/Package100
MountSurface Mount
Number of Terminals6
Technical
Continuous Drain Current (ID)12.1 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance85 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationDual
Fall Time6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance250 pF
Max Operating Temperature150 °C
Max Power Dissipation25 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Rds On Max85 mΩ
Rise Time8 ns
Schedule B8541290080
Turn-Off Delay Time8 ns
Turn-On Delay Time8 ns