Infineon BSC0924NDIATMA1

Name: Infineon BSC0924NDIATMA1
Brand: Infineon
SKU: BSC0924NDIATMA1

Transistor MOSFET Array Dual N-CH 30V 40A 8-Pin TISON T/R

$ 0.399

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Distributor		SKU		Min	Pkg
Arrow Electronics	3	BSC0924NDIATMA1	4,981	1		0.455	0.455	0.455	0.455	0.455
Rochester Electronics		BSC0924NDIATMA1	604,741					0.501	0.415	0.370	13h
DigiKey	3	448-BSC0924NDIATMA1CT-ND	71,671	1	Cut Tape	1.660	1.048	0.698	0.500	0.459
Future Electronics	2	BSC0924NDIATMA1	0	5K	Tape & Reel					0.355
Avnet		BSC0924NDIATMA1	0	5K						0.327	16h

数据表和文档

下载 Infineon BSC0924NDIATMA1 的数据表和制造商文档。

IHS

Datasheet14 页12 年前

库存历史记录

3 个月趋势:

-0.00%

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供应链

Country of OriginAustria, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2012-04-20

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

描述

由其分销商提供的 Infineon BSC0924NDIATMA1 的描述。

Transistor MOSFET Array Dual N-CH 30V 40A 8-Pin TISON T/R

EBV Elektronik

2.5W 20V 2V 6.7nC@ 4.5V @ Q1,8.5nC@ 4.5V @ Q2 1N,2N 30V 5m¦¸@ 10V @ Q 1,3.7m¦¸@ 10V @ Q 2m¦¸ 40A 870pF@ 15V @ Q 1,1.1nF@ 15V @ Q 2 TISON-8 , 5.9mm*5.15mm*1.27mm

UnikeyIC

Mosfet, Dual N-Ch, 30V, 40A, Tison; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0038Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Rohs Compliant: Yes |Infineon BSC0924NDIATMA1

Newark

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)

Infineon