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描述
由其分销商提供的 Vishay SIHP33N60E-GE3 的描述。
MOSFET, N CH, 600V, 33A, TO-220AB-3; Transistor Polarity:N Channel; Continuous D
Trans MOSFET N-CH 600V 33A 3-Pin(3+Tab) TO-220AB
MOSFET 600V 99MOHM@10V 33A N-CH E-SRS
Power Field-Effect Transistor, 33A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
278W(Tc) 30V 4V@ 250¦ÌA 150nC@ 10 V 1N 600V 99m¦¸@ 16.5A,10V 33A 3.508nF@100V TO-220AB 10.41mm*4.7mm*15.49mm
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)33 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance99 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time80 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.508 nF
Max Operating Temperature150 °C
Max Power Dissipation278 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation278 W
Rds On Max99 mΩ
Rise Time90 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time150 ns
Turn-On Delay Time56 ns