价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TTI | SIHP30N60E-GE3 | 4,000 | 50 | Tube | 15h | |||||||
| TME | SIHP30N60E-GE3 | 0 | 500 | 1h | ||||||||
| Newark | SIHP30N60E-GE3 | 0 | 1 | |||||||||
| Avnet | SIHP30N60E-GE3 | 0 | 1K | 3d | ||||||||
| Future Electronics | SIHP30N60E-GE3 | 0 | 50 | Tube |
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-11-21
Lifecycle StatusProduction (Last Updated: 5 months ago)
相关零件
VishaySIHP33N60E-GE3
MOSFET, N CH, 600V, 33A, TO-220AB-3; Transistor Polarity:N Channel; Continuous D
VishaySIHP24N65E-GE3
MOSFET N-CH 650V 24A TO220AB / N-Channel 650 V 24A (Tc) 250W (Tc) Through Hole TO-220AB
VishaySIHP24N65E-E3
MOSFET, N CH, 650V, 24A, TO-220AB; Transistor Polarity:N Channel; Continuous Dra
描述
由其分销商提供的 Vishay SIHP30N60E-GE3 的描述。
MOSFET, N CH, 600V, 29A, TO-220AB-3; Transistor Polarity:N Channel; Continuous D
E-Series N-Channel 600 V 0.125 O 130 nC Flange Mount Power Mosfet- TO-220AB
Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-220AB
Vishay NMOS E Series, Vds=600 V, 29 A, TO-220AB, , 3
MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)29 A
Drain to Source Resistance125 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time36 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.6 nF
Max Operating Temperature150 °C
Max Power Dissipation250 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation250 W
Rds On Max125 mΩ
Resistance125 mΩ
Rise Time32 ns
Threshold Voltage2 V
Turn-Off Delay Time63 ns
Turn-On Delay Time19 ns
Dimensions
Height15.49 mm
Length10.51 mm
Width4.65 mm