备用零件
Price @ 1000
$ 0.38
$ 0.691
Stock
9,308
164,066
Authorized Distributors
1
6
Mount
-
Surface Mount
Case/Package
-
DPAK
Drain to Source Voltage (Vdss)
-100 V
-
Continuous Drain Current (ID)
3.1 A
3.1 A
Threshold Voltage
-
-
Rds On Max
-
1.2 Ω
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
2.5 W
2.5 W
Input Capacitance
-
200 pF
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-07-22
Lifecycle StatusProduction (Last Updated: 5 months ago)
描述
由其分销商提供的 Vishay SIHFR9110TR-GE3 的描述。
Transistor Mosfet P-ch 100V 3.1A 3-PIN TO-252 T/r
MOSFET P-CHANNEL 100V
Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
P-CH SINGLE -100V TO252
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Number of Terminals2
Technical
Continuous Drain Current (ID)3.1 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance1.2 Ω
Drain to Source Voltage (Vdss)-100 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation25 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Turn-Off Delay Time15 ns
Turn-On Delay Time10 ns
Dimensions
Height2.52 mm