Vishay SIA461DJ-T1-GE3

MOSFET, P-CH, -20V, -12A, POWERPAK-6; Transistor Polarity: P Channel; Continuous
$ 0.191
Production
制造商页面数据表

价格与库存

查看所有价格优惠
DistributorSKUMinPkg
AvnetSIA461DJ-T1-GE33,0003K
2d
Newark
2
SIA461DJ-T1-GE313,4055Cut Tape
RutronikLVMOS15613,0003K
1h
Arrow Electronics
2
SIA461DJ-T1-GE36171
Verical
2
SIA461DJ-T1-GE327,0003K

数据表和文档

下载 Vishay SIA461DJ-T1-GE3 的数据表和制造商文档。

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Datasheet9 页2 年前
Technical Drawing1 页18 年前

Newark

Farnell

库存历史记录

3 个月趋势:
-4.82%
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供应链

Country of OriginGermany
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-07-08
Lifecycle StatusProduction (Last Updated: 1 month ago)

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描述

由其分销商提供的 Vishay SIA461DJ-T1-GE3 的描述。

MOSFET, P-CH, -20V, -12A, POWERPAK-6; Transistor Polarity:P Channel; Continuous
Newark
SiA461DJ Series 20 V 8.3 A 33 mOhm P-Channel MOSFET - PowerPAK® SC-70-6
Future Electronics
Trans MOSFET N-CH 20V 8.3A 8-Pin PowerPAK SC-70 T/R
Avnet Japan
Power Field-Effect Transistor, 12A I(D), 20V, 0.033ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
IHS
MOSFET -20V -12A 17.9W 33mohm @ 4.5V
Jak Electronics
Vishay PMOS, Vds=20 V, 12 A, PowerPAK SC-70, , 6
UnikeyIC
P-CH 20V 12A 25mOhm at 4,5V PPAK SC-70
Rutronik
PowerPAK SC-70-6L MOSFETs ROHS
Dasenic
MOSFET P-CH, 20V, SC70-6L; Transistor Polarity:P Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.025ohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:17.9W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SC70; No. of Pins:6; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
Farnell

图片

Vishay
Farnell
Newark
Future Electronics

制造商别名

Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：

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