供应链
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-09-27
Lifecycle StatusEOL (Last Updated: 4 days ago)
LTB Date2024-06-22
LTD Date2024-12-22
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)
相关零件
VishaySI3460DDV-T1-GE3
Transistor: N-MOSFET; unipolar; 20V; 7.9A; 0.028ohm; 2.7W; -55+150 deg.C; SMD; TSOP6
描述
由其分销商提供的 onsemi FDMA510PZ 的描述。
P-Channel PowerTrench® MOSFET -20V, -7.8A, 30mΩ
MOSFET P-CH 20V 7.8A 6-MICROFET / Trans MOSFET P-CH 20V 7.8A 6-Pin WDFN EP T/R
FDMA510PZ Series 20 V 30 mOhm Single P-Channel PowerTrench Mosfet MicroFET 2x2
MLP6 2X2 , -20V,-7.8A,30m ohm,SINGLE, PCH POWER MOSFET
MOSFET,P CH,20V,7.8A,MICROFET2X2; Transistor Polarity:P Channel; Continuous Drain Current Id:-7.8A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.027ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-700mV; Power Dissipation Pd:2.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:6; SVHC:No SVHC (20-Jun-2011)
This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Contact PlatingGold
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight30 mg
Technical
Continuous Drain Current (ID)7.8 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance30 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationSingle
Fall Time64 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance1.48 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.4 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs-700 mV
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation2.4 W
Rds On Max30 mΩ
Resistance30 MΩ
Rise Time9 ns
Schedule B8541290080
Threshold Voltage-700 mV
Turn-Off Delay Time125 ns
Turn-On Delay Time7 ns
Dimensions
Height800 µm
Length2 mm
Width2 mm