Vishay SI7852DP-T1-E3

Name: Vishay SI7852DP-T1-E3
Brand: Vishay
SKU: SI7852DP-T1-E3

Trans Mosfet N-ch 80V 7.6A 8-PIN Powerpak So T/r | Siliconix / Vishay SI7852DP-T1-E3

$ 1.53

Production

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Newark	2	SI7852DP-T1-E3	3,000	1	Cut Tape	2.890	2.890	2.370	2.370	2.370
Verical		SI7852DP-T1-E3	4,545	10			0.756	0.722	0.687	0.676
Arrow Electronics		SI7852DP-T1-E3	4,545	1		0.756	0.744	0.722	0.687	0.676
DigiKey	3	SI7852DP-T1-E3CT-ND	8,379	1	Cut Tape	4.210	2.764	1.941	1.622	1.622
TTI		SI7852DP-T1-E3	0	3K	Tape & Reel					1.470	19h

数据表和文档

下载 Vishay SI7852DP-T1-E3 的数据表和制造商文档。

Upverter

Datasheet12 页8 年前

Newark

Farnell

element14 APAC

iiiC

库存历史记录

3 个月趋势:

-21.55%

CAD 模型

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-08-11

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Vishay SI7852DP-T1-E3 的描述。

TRANS MOSFET N-CH 80V 7.6A 8-PIN POWERPAK SO T/R | Siliconix / Vishay SI7852DP-T1-E3

RS (Formerly Allied Electronics)

1.9W(Ta) 20V 2V@ 250¦ÌA (Min) 41nC@ 10 V 1N 80V 16.5m¦¸@ 10A,10V 7.6A 2.5nF 4.9mm*5.89mm*1.07mm

UnikeyIC

N-Channel 80 V 7.6 A 16.5 Ohm 1.9 W Surface Mount Power MOSFET - PowerPAK-SO-8

Future Electronics

Power Field-Effect Transistor, 7.6A I(D), 80V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Semicontronic

N-Channel MOSFETs 80V 12.5A 5.2W

Mouser

IC REG BUCK ADJUSTABLE 1A 8SOIC

YIC International

MOSFET, N SO-8 REEL 3K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:80V; Current, Id Cont:7.6A; Resistance, Rds On:10.9ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2V; Case Style:SOIC PowerPAK; Termination Type:SMD; Current, Idm Pulse:50A; External Depth:5.26mm; External Length / Height:1.2mm; N-channel Gate Charge:41nC; No. of Pins:8; Power Dissipation:1.9W; Power, Pd:1.9W; Quantity, Reel:3000; Resistance, Rds on Max:0.0165ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25K; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Thermal Resistance, Junction to Case A:1.8°C/W; Voltage, Vds Max:80V; Voltage, Vgs Max:20V; Voltage, Vgs th Min:2V; Width, External:6.2mm; Width, Tape:12mm

Farnell