价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | STS26N3LLH6 | 0 | 1 | 6h | ||||||||
| Microchip USA | STS26N3LLH6 | 161 | 3K | Tray | 3d | |||||||
| Win Source | WS-STS26N3LLH6 | 9,800 | 30 | 8h | ||||||||
| Worldway Electronics | STS26N3LLH6 | 12,352 | 7 | Tape & Reel | 1d | |||||||
| Aztech | STS26N3LLH6 | 7,746 | 2d |
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-07-08
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2020-10-02
LTD Date2021-04-02
相关零件
InfineonIRF7832TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.1Milliohms;ID 20A;SO-8;PD 2.5W;VGS +/-20V
InfineonIRF7832PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.1Milliohms;ID 20A;SO-8;PD 2.5W;VGS +/-20V
描述
由其分销商提供的 STMicroelectronics STS26N3LLH6 的描述。
N-Channel 30 V 0.0044 Ohm SMT STripFET VI DeepGATE Mosfet SOIC-8
Mosfet Transistor, N Channel, 26 A, 30 V, 0.0038 Ohm, 10 V, 1 V Rohs Compliant: Yes |Stmicroelectronics STS26N3LLH6
2.7W(Ta) 20V 1V@ 250¦ÌA 40nC@ 4.5V 1N 30V 4.4m¦¸@ 13A,10V 26A 4.04nF@25V SOP
MOSFET, N-CH, 30V, 26A, 8-SOIC
Trans MOSFET N-CH 30V 26A 8-Pin SO N T/R
26 A 30 V 0.0053 ohm N-CHANNEL Si POWER MOSFET
Power Field-Effect Transistor, 26A I(D), 30V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Power MOSFETs, 30V, 26A, SO-8, Tape and Reel
STMicroelectronics SCT
MOSFET, N-CH, 30V, 26A, 8-SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 26A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)26 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance5.3 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time46 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.04 nF
Max Operating Temperature150 °C
Max Power Dissipation2.7 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Elements1
PackagingTape and Reel
Power Dissipation2.7 W
Rds On Max4.4 mΩ
Resistance4.4 mΩ
Rise Time18 ns
Threshold Voltage1 V
Turn-Off Delay Time75 ns
Turn-On Delay Time17 ns