备用零件
Price @ 1000
$ 2.005
$ 2.249
Stock
416,617
293,952
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
-
-
Drain to Source Voltage (Vdss)
-200 V
-200 V
Continuous Drain Current (ID)
2.2 A
2.2 A
Threshold Voltage
-4 V
-4 V
Rds On Max
174 mΩ
174 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
1.9 W
5.4 W
Input Capacitance
-
-
描述
由其分销商提供的 Vishay SI7431DP-T1-GE3 的描述。
MOSFET Devices; VISHAY; SI7431DP-T1-GE3; -200 V; -2.2 A; 20 V; 1.9 W
Trans MOSFET P-CH 200V 2.2A 8-Pin PowerPAK SO T/R
MOSFET P-CH 200V 2.2A PPAK SO-8
Power Field-Effect Transistor, 2.2A I(D), 200V, 0.174ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
P-CH 200V 3,8A 174mOhm PwrPSO-8 RoHSconf
P-Ch 200V 3,8A 5,4W 0,171R PowerPakSO8
P-CH POWERPAK SO-8 200V 174MOHM @ 10V
TRANS_MOS P PUIS SI7431DP 200V/3.6A-TRAN
MOSFET,P CH,DIODE,200V,3.8A,SO8 PPAK; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.2A; Drain Source Voltage Vds:-200V; On Resistance Rds(on):0.145ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:5.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-3.8A; Power Dissipation Pd:5.4W; Voltage Vgs Max:-20V
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight506.605978 mg
Technical
Continuous Drain Current (ID)2.2 A
Drain to Source Breakdown Voltage-200 V
Drain to Source Resistance174 mΩ
Drain to Source Voltage (Vdss)-200 V
Element ConfigurationSingle
Fall Time49 ns
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation5.4 W
Manufacturer Package IdentifierS17-0173-Single
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Channels1
Number of Elements1
Power Dissipation1.9 W
Rds On Max174 mΩ
Rise Time49 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time110 ns
Turn-On Delay Time23 ns
Dimensions
Height1.12 mm
Length4.9 mm
Width5.89 mm