价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | SI4943CDY-T1-E3CT-ND | 599 | 1 | Cut Tape | ||||||||
| TME | SI4943CDY-T1-E3 | 0 | 2500 | 11h | ||||||||
| TTI | SI4943CDY-T1-E3 | 0 | 2500 | Tape & Reel | 22h | |||||||
| Future Electronics | SI4943CDY-T1-E3 | 0 | 2500 | Tape & Reel | ||||||||
| Avnet | SI4943CDY-T1-E3 | 0 | 2500 | 22h |
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-07-29
Lifecycle StatusProduction (Last Updated: 1 month ago)
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描述
由其分销商提供的 Vishay SI4943CDY-T1-E3 的描述。
Transistor MOSFET Array Dual P-CH 20V 8A 8-Pin SOIC T/R
DUAL P-CHANNEL 20-V (D-S) MOSFET
Power Field-Effect Transistor, 8A I(D), 20V, 0.0192ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Transistor; Continuous Drain Current, Id:-8000mA; Drain Source Voltage, Vds:-20V; On Resistance, Rds(on):0.033ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:-3V; Power Dissipation, Pd:2W ;RoHS Compliant: Yes
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight186.993455 mg
Technical
Continuous Drain Current (ID)8 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance19.2 mΩ
Element ConfigurationDual
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.945 nF
Max Operating Temperature150 °C
Max Power Dissipation3.1 W
Min Breakdown Voltage20 V
Min Operating Temperature-50 °C
Number of Channels2
Number of Elements2
Power Dissipation2 W
Rds On Max19.2 mΩ
Resistance19.2 mΩ
Rise Time71 ns
Turn-Off Delay Time29 ns
Turn-On Delay Time50 ns
Dimensions
Height1.5 mm
Length5 mm
Width4 mm