供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-02-08
Lifecycle StatusObsolete (Last Updated: 3 months ago)
描述
由其分销商提供的 Vishay SI4618DY-T1-E3 的描述。
Trans MOSFET N-CH 30V 6.7A/11.4A 8-Pin SOIC N T/R
DUAL N-CH 30-V (D-S) MOSFET W/SCHOTTKY
Small Signal Field-Effect Transistor, 6.7A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET 2N-CH 30V 8A/15.2A 8SOIC
Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:7400mA; Rds(on) Test Voltage, Vgs:16V; Threshold Voltage, Vgs Typ:2.5V; Package/Case:8-SOIC ;RoHS Compliant: Yes
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight186.993455 mg
Technical
Continuous Drain Current (ID)6.7 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance17 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time45 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance1.535 nF
Max Operating Temperature150 °C
Max Power Dissipation4.16 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Rds On Max17 mΩ
Rise Time97 ns
Turn-Off Delay Time35 ns
Turn-On Delay Time24 ns
Dimensions
Height1.55 mm
Length5 mm
Width4 mm