备用零件
Price @ 1000
$ 0.2
$ 0.208
Stock
6,928,691
1,002,057
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
SOT-23
SOT-23
Drain to Source Voltage (Vdss)
-20 V
-20 V
Continuous Drain Current (ID)
3.1 A
3.1 A
Threshold Voltage
-1 V
-1 V
Rds On Max
112 mΩ
65 mΩ
Gate to Source Voltage (Vgs)
8 V
8 V
Power Dissipation
1.6 W
860 mW
Input Capacitance
405 pF
405 pF
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-07-29
Lifecycle StatusNRND (Last Updated: 5 months ago)
相关零件
VishaySI2302DDS-T1-GE3
VISHAY SI2302DDS-T1-GE3 MOSFET Transistor, N Channel, 2.6 A, 20 V, 0.045 ohm, 4.5 V
描述
由其分销商提供的 Vishay SI2301CDS-T1-GE3 的描述。
P-CH MOSFET SOT-23 20V 112MOHM @ 4.5V - LEAD(PB) AND HALOGEN FREE
Trans MOSFET P-CH 20V 3.1A 3-Pin SOT-23 T/R / MOSFET P-CH 20V 3.1A SOT23-3
Power MOSFET, P Channel, 20 V, 3.1 A, 0.112 ohm, TO-236, Surface Mount
P-CHANNEL 20 V (D-S) MOSFET Small Signal Field-Effect Transistor, 3.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:-3100mA; Drain Source Voltage, Vds:-20V; On Resistance, Rds(on):0.142ohm; Rds(on) Test Voltage, Vgs:8V; Threshold Voltage, Vgs Typ:-1V; Power Dissipation, Pd:860mW ;RoHS Compliant: Yes
MOSFET, P-CH, 20V, 3.1A, SOT23; Transistor Polarity:P Channel; Current Id Max:-3.1A; Drain Source Voltage Vds:-20V; On State Resistance:90mohm; Rds(on) Test Voltage Vgs:-4.5V; Voltage Vgs Max:8V; Power Dissipation:1.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight1.437803 g
Technical
Continuous Drain Current (ID)3.1 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance112 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationSingle
Fall Time35 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance405 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.6 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs-400 mV
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation1.6 W
Rds On Max112 mΩ
Resistance112 mΩ
Rise Time35 ns
Schedule B8541210080
Threshold Voltage-1 V
Turn-Off Delay Time30 ns
Turn-On Delay Time11 ns
Dimensions
Height1.12 mm
Length3.04 mm
Width1.4 mm