Vishay SI1416EDH-T1-GE3

SI1416EDH-T1-GE3 N-channel Mosfet Transistor, 3.9 A, 30 V, 6-PIN SOT-363
$ 0.15
Production
制造商页面数据表

价格与库存

查看所有价格优惠
DistributorSKUMinPkg
AvnetSI1416EDH-T1-GE36,0003K
2d
Newark
2
SI1416EDH-T1-GE39,4475Cut Tape
Arrow Electronics
2
SI1416EDH-T1-GE32,8951
Verical
2
SI1416EDH-T1-GE36,0003K
Future ElectronicsSI1416EDH-T1-GE39,0003KTape & Reel

数据表和文档

下载 Vishay SI1416EDH-T1-GE3 的数据表和制造商文档。

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Datasheet12 页5 年前

Farnell

Newark

RS (Formerly Allied Electronics)

Future Electronics

库存历史记录

3 个月趋势:
+0.98%
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备用零件

此零件
备用零件
VishaySI1416EDH-T1-GE3
VishaySI1428EDH-T1-GE3
Price @ 1000
$ 0.15
$ 0.181
Stock
2,187,978
9,689
Authorized Distributors
6
1
Mount
Surface Mount
Surface Mount
Case/Package
SOT-363
SC
Drain to Source Voltage (Vdss)
30 V
-
Continuous Drain Current (ID)
3.9 A
4 A
Threshold Voltage
-
-
Rds On Max
58 mΩ
-
Gate to Source Voltage (Vgs)
12 V
12 V
Power Dissipation
1.56 W
1.56 W
Input Capacitance
-
-

供应链

Country of OriginGermany
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-06-10
Lifecycle StatusProduction (Last Updated: 4 months ago)

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描述

由其分销商提供的 Vishay SI1416EDH-T1-GE3 的描述。

SI1416EDH-T1-GE3 N-CHANNEL MOSFET TRANSISTOR, 3.9 A, 30 V, 6-PIN SOT-363
RS (Formerly Allied Electronics)
SI1416EDH Series N-Channel 30 V 3.9 A 12 nC Surface Mount Mosfet - SC-70-6
Future Electronics
Power MOSFET, N Channel, 30 V, 3.9 A, 0.047 ohm, SOT-363, Surface Mount
EBV Elektronik
MOSFET, N-CH, 30V, 3.9A, SOT-363-6; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.9A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.047ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.4V; Power Dissipation Pd: 2.8W; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jun-2015)
Farnell

图片

Vishay
TME
element14 APAC
Future Electronics

制造商别名

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