供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1990-01-01
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2024-11-18
LTD Date2025-05-18
描述
由其分销商提供的 Vishay IRLR120PBF 的描述。
Trans MOSFET N-CH 100V 7.7A 3-Pin(2+Tab) DPAK
Power MOSFET Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N, 100V, 7.7A, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.7A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.27ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 2V; Power Di
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)7.7 A
Drain to Source Resistance270 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time27 ns
Gate to Source Voltage (Vgs)10 V
Input Capacitance490 pF
Max Operating Temperature150 °C
Max Power Dissipation42 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max270 mΩ
Rise Time64 ns
Schedule B8541290080
Turn-Off Delay Time21 ns
Turn-On Delay Time9.8 ns
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm