备用零件
Price @ 1000
$ 0.36
$ 0.537
Stock
956,706
583,420
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
Drain to Source Voltage (Vdss)
-100 V
-100 V
Continuous Drain Current (ID)
6.6 A
6.6 A
Threshold Voltage
-4 V
-
Rds On Max
530 mΩ
530 mΩ
Gate to Source Voltage (Vgs)
30 V
30 V
Power Dissipation
2.5 W
2.5 W
Input Capacitance
470 pF
470 pF
供应链
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
描述
由其分销商提供的 onsemi FQD8P10TM 的描述。
P-Channel Power MOSFET, QFET®, -100 V, -6.6 A, 530 mΩ, DPAK
TRANSISTOR, P-CHANNEL, QFET MOSFET, -100V, -6.6A, 530 MOHM, 175C MAX, DPAK
P-Channel 100 V 0.53 Ohm Surface Mount Mosfet - TO-252-3
Power Field-Effect Transistor, 6.6A I(D), 100V, 0.53ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, P-CH, -100V, -6.6A, TO-252AA-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-6.6A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.41ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vg
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)6.6 A
Current Rating-6.6 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance530 mΩ
Drain to Source Voltage (Vdss)-100 V
Element ConfigurationSingle
Fall Time35 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance470 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation44 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max530 mΩ
Resistance530 mΩ
Rise Time110 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time20 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)-100 V
Dimensions
Height2.517 mm
Length6.6 mm
Width6.1 mm