Vishay IRLR110PBF

Name: Vishay IRLR110PBF
Brand: Vishay
SKU: IRLR110PBF

Mosfet; Power; N-ch; Vdss 100V; Rds(on) 0.54 Ohm; Id 4.3A; TO-252AA; Pd 25W; Vgs +/-10V

$ 0.432

Production

制造商页面数据表

价格与库存

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未经授权的库存分销商

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Distributor		SKU		Min	Pkg
Arrow Electronics	3	IRLR110PBF	1,495	1		1.213	0.814	0.655	0.492	0.492
Verical	4	IRLR110PBF	36	13				0.454	0.454	0.454
TME	2	IRLR110PBF	603	1		0.730	0.620	0.582	0.548	0.393	3h
DigiKey		IRLR110PBF-ND	148	1	Tube	2.180	2.180	0.983	0.742	0.576
TTI		IRLR110PBF	0	3K	Tube					0.443	7h

数据表和文档

下载 Vishay IRLR110PBF 的数据表和制造商文档。

Newark

Datasheet13 页4 年前

Datasheet11 页14 年前

Datasheet11 页9 年前

Datasheet8 页17 年前

Datasheet11 页10 年前

Datasheet6 页28 年前

Upverter

IHS

element14 APAC

TME

库存历史记录

3 个月趋势:

+18.29%

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装

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VishayIRLR110PBF

VishayIRLR110TRLPBF

Price @ 1000

$ 0.432

$ 0.331

Stock

56,524

35,538

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

Drain to Source Voltage (Vdss)

100 V

Continuous Drain Current (ID)

4.3 A

Threshold Voltage

2 V

Rds On Max

540 mΩ

Gate to Source Voltage (Vgs)

10 V

Power Dissipation

25 W

2.5 W

Input Capacitance

250 pF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1990-01-01

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Vishay IRLR110PBF 的描述。

Mosfet; Power; N-ch; Vdss 100V; Rds(on) 0.54 Ohm; Id 4.3A; TO-252AA; Pd 25W; Vgs +/-10V

Fly-Wing Technology

Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252

Future Electronics

Power MOSFET Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

ComSIT Distribution GmbH

N CHANNEL MOSFET, 100V, 4.3A, D-PAK; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V RoHS Compliant: No

Newark

MOSFET, N, 100V, 4.3A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):540mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:25W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:4.3A; Junction to Case Thermal Resistance A:5°C/W; On State resistance @ Vgs = 10V:540mohm; Package / Case:DPAK; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:17A; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V

element14 APAC