新增内容: 采用我们全新改版的体验,更快找到合适的零件

了解更多

Vishay IRFU320PBF

Single N-Channel 400 V 1.8 Ohms Through Hole Power Mosfet - IPAK (TO-251)
$ 0.599
Production

价格与库存

数据表和文档

下载 Vishay IRFU320PBF 的数据表和制造商文档。

Newark

Datasheet13 页4 年前
Datasheet11 页14 年前
Datasheet8 页16 年前
Datasheet8 页17 年前
Datasheet11 页11 年前

element14 APAC

RS (Formerly Allied Electronics)

TME

iiiC

库存历史记录

3 个月趋势:
+36.83%

CAD 模型

从我们值得信赖的合作伙伴处下载 Vishay IRFU320PBF 符号、封装和 3D STEP 模型。

来源eCADmCAD文件
Ultra Librarian
符号封装
下载
下载 CAD 模型时,合作伙伴网站将在新标签页中打开
从 Octopart 下载 CAD 模型,即表示您同意我们的条款和条件以及隐私政策

备用零件

Price @ 1000
$ 0.599
$ 0.419
Stock
279,270
800
Authorized Distributors
6
2
Mount
Through Hole
-
Case/Package
TO-251-3
-
Drain to Source Voltage (Vdss)
400 V
-
Continuous Drain Current (ID)
3.1 A
3.1 A
Threshold Voltage
4 V
-
Rds On Max
1.8 Ω
-
Gate to Source Voltage (Vgs)
20 V
-
Power Dissipation
-
-
Input Capacitance
350 pF
-

供应链

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1990-01-01
Lifecycle StatusProduction (Last Updated: 5 months ago)

相关零件

Transistor MOSFET N-CH 500V 2.4A 3-Pin (3+Tab) IPAK
onsemiFQU5N40TU
Power MOSFET, N-Channel, QFET®, 400 V, 3.4 A, 1.6 Ω, IPAK
STMicroelectronicsSTD5NK40Z-1
STD5NK40Z-1 N-channel MOSFET Transistor, 3 A, 400 V, 3-Pin TO-251
Power MOSFET, N-Channel, QFET®, 500 V, 4 A, 1.4 mΩ, D2PAK
Power Field-Effect Transistor, 2.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 500V 3.3A 3-Pin(3+Tab) IPAK

描述

由其分销商提供的 Vishay IRFU320PBF 的描述。

Single N-Channel 400 V 1.8 Ohms Through Hole Power Mosfet - IPAK (TO-251)
MOSFET, POWER, N-CH, VDSS 400V, RDS(ON) 1.8 OHMS, ID 3.1A, TO-251AA, PD 2.5W, VGS+/-20V
POWER MOSFET Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:400V; Continuous Drain Current, Id:3.1A; On Resistance, Rds(on):1.8ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:I-PAK ;RoHS Compliant: Yes
MOSFET, N, 400V, 3.1A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:3.1A; Drain Source Voltage Vds:400V; On Resistance Rds(on):1.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:42W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:3.1A; Fall Time tf:13ns; Junction to Case Thermal Resistance A:3°C/W; Package / Case:IPAK; Power Dissipation Pd:42W; Power Dissipation Pd:42W; Pulse Current Idm:12A; Rise Time:14ns; Termination Type:Through Hole; Turn Off Time:30ns; Turn On Time:10ns; Voltage Vds Typ:400V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

制造商别名

Vishay 在全球拥有多个品牌,分销商可将其用作替代名称。Vishay 也可称为以下名称:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • Vishay Thin Film
  • Vishay Intertechnology
  • VISHA
  • Vishay Semiconductors
  • VISAHY
  • Vishay Intertech
  • VISHY
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • Vishay Intertechnologies
  • Vishay General Semiconductor - Diodes Division
  • Vishay Semiconductor Opto Division
  • VSHAY
  • VISH/IR
  • VSHY
  • VSH
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VISHAY ELECTRONIC
  • VISHAY AMERICAS INC
  • Vishay Semiconductor Diodes Division
  • VISHAY OPTO
  • Vishay Techno
  • VISHAY FOIL RESISTORS
  • Vishay Semiconductor
  • Vishay Sfernice
  • Vishay Siliconix
  • Vishay Dale
  • Vishay BCcomponents
  • Vishay Angstrohm
  • Vishay Draloric