价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | IRFR010TRLPBF | 0 | 3K | 21h | ||||||||
| TTI Europe | IRFR010TRLPBF | 0 | 3K | Tape & Reel | 22h | |||||||
| Arrow Electronics | IRFR010TRLPBF | 0 | 3K | |||||||||
| Win Source | WS-IRFR010TRLPBF | 20,864 | 60 | 20h | ||||||||
| Esaler Electronic | IRFR010TRLPBF | 3,000 | 3d |
备用零件
Price @ 1000
$ 0.623
Stock
54,129
53,177
Authorized Distributors
3
6
Mount
Surface Mount
Surface Mount
Case/Package
TO-252-3
DPAK
Drain to Source Voltage (Vdss)
50 V
50 V
Continuous Drain Current (ID)
8.2 A
8.2 A
Threshold Voltage
-
-
Rds On Max
200 mΩ
200 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
-
25 W
Input Capacitance
250 pF
250 pF
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描述
由其分销商提供的 Vishay IRFR010TRLPBF 的描述。
MOSFET N-CH 50V 8.2A DPAK
Power Field-Effect Transistor, 8.2A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET N-CHANNEL 60V
TO-252-3 MOSFETs ROHS
N-CH SINGLE 60V TO252
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:50V; Continuous Drain Current, Id:8.2A; On Resistance, Rds(on):200mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)8.2 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance200 mΩ
Drain to Source Voltage (Vdss)50 V
Element ConfigurationSingle
Fall Time19 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance250 pF
Max Operating Temperature150 °C
Max Power Dissipation25 W
Min Breakdown Voltage50 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max200 mΩ
Rise Time50 ns
Turn-Off Delay Time13 ns
Turn-On Delay Time10 ns