Vishay IRFPG40PBF

Name: Vishay IRFPG40PBF
Brand: Vishay
SKU: IRFPG40PBF

Transistor MOSFET N-CH 1KV 4.3A 3-Pin (3+Tab) TO-247AC

$ 2.522

Production

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
Newark		IRFPG40PBF	970	1		5.510	4.900	3.710	2.890	2.670
Verical		IRFPG40PBF	282	16				3.148	2.891	2.891
Future Electronics		IRFPG40PBF	50	50	Tube			2.770	2.700	2.630
TME	2	IRFPG40PBF	282	1		6.886*	4.254*	3.079*	2.844*	2.844*	9h
DigiKey		IRFPG40PBF-ND	561	1	Tube	6.880	6.880	3.345	2.626	2.563

数据表和文档

下载 Vishay IRFPG40PBF 的数据表和制造商文档。

Newark

Datasheet11 页4 年前

Datasheet9 页13 年前

Datasheet8 页16 年前

Datasheet8 页17 年前

Datasheet9 页10 年前

Datasheet9 页11 年前

IHS

element14 APAC

Farnell

TME

库存历史记录

3 个月趋势:

-22.53%

CAD 模型

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来源	eCAD	mCAD	文件
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供应链

Export Control Classification Number (ECCN) CodeEAR99

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Vishay IRFPG40PBF 的描述。

Transistor MOSFET N-CH 1KV 4.3A 3-Pin (3+Tab) TO-247AC

North Star Micro

IRFPG40 Series 1000 V 4.3 A 3.5 Ohm Flange Mount N-Channel Power Mosfet TO-247AC

Future Electronics

POWER MOSFET, N-CH, VDSS 1000V, RDS(ON) 3.5OHMS, ID 4.3A, TO-247AC, PD 150W, VGS+/-20V

RS (Formerly Allied Electronics)

Power Field-Effect Transistor, 4.3A I(D), 1000V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

Semicontronic

N Channel Mosfet, 1Kv, 4.3A, To-247; Transistor Polarity:n Channel; Drain Source Voltage Vds:1Kv; Continuous Drain Current Id:4.3A; On Resistance Rds(On):3.5Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: No

Newark

MOSFET, N, 1000V, 4.3A, TO-247AC; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:1000V; Current, Id Cont:4.3A; Resistance, Rds On:3.5ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-247AC; Termination Type:Through Hole; Current, Idm Pulse:17A; No. of Pins:3; Power Dissipation:150W; Power, Pd:150W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:0.83°C/W; Voltage, Vds:1000V; Voltage, Vds Max:1000V

Farnell