供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1993-09-01
Lifecycle StatusObsolete (Last Updated: 8 months ago)
LTB Date2024-11-04
LTD Date2025-05-04
相关零件
STMicroelectronicsSTW26NM60ND
N-channel 600 V, 0.145 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-247 package
STMicroelectronicsSTW23N80K5
N-channel 800 V, 0.23 Ohm typ., 16 A MDmesh K5 Power MOSFET in a TO-247 package
描述
由其分销商提供的 Vishay IRFPE40PBF 的描述。
Single N-Channel 800 V 2 Ohms Flange Mount Power Mosfet - TO-247AC
Single-Gate MOSFET Transistors N-Chan 800V 5.4 Amp
800V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A TO-247AC PACKAGE
Trans MOSFET N-CH 800V 5.4A 3-Pin(3+Tab) TO-247AC
MOSFET Devices; VISHAY; IRFPE40PBF; 800 V; 5.4 A; 20 V; 150 W
Vishay NChannel EnhancedMOSTube, Vds=800 V, 5.4 A, TO-247ACencapsulation, Through hole mounting, 3Pin
Power Field-Effect Transistor, 5.4A I(D), 800V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
场效应管, MOSFET, N沟道, 800V, 5.4A, TO-247;
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:800V; Continuous Drain Current, Id:5.4A; On Resistance, Rds(on):2ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-247AC ;RoHS Compliant: Yes
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- Vishay Techno
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight38.000013 g
Technical
Continuous Drain Current (ID)5.4 A
Current Rating5.4 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance2 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time32 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.9 nF
Max Operating Temperature150 °C
Max Power Dissipation150 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation150 W
Rds On Max2 Ω
Recovery Time830 ns
Resistance2 Ω
Rise Time36 ns
Schedule B8541290080
Turn-Off Delay Time100 ns
Turn-On Delay Time16 ns
Voltage Rating (DC)800 V
Dimensions
Height20.7 mm
Length15.87 mm
Width5.31 mm