价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | STW26NM60ND | 0 | 24 | Bulk | 22h | |||||||
| Microchip USA | STW26NM60ND | 1,384 | 600 | Tray | 21h | |||||||
| Win Source | WS-STW26NM60ND | 20 | 7 | 6h | ||||||||
| Worldway Electronics | STW26NM60ND | 29,884 | 7 | Tube | 5h | |||||||
| Aztech | STW26NM60ND | 10,577 | 1h |
相关零件
VishaySIHG25N50E-GE3
Mosfet, N-Ch, 500V, 26A, To-247Ac Rohs Compliant: Yes |Vishay SIHG25N50E-GE3
VishaySIHG22N60E-GE3
E-Series N-Channel 600 V 227 W 0.18 O 86 nC Flange Mount Power Mosfet - TO-247AC
STMicroelectronicsSTW24N60DM2
N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in TO-247 package
STMicroelectronicsSTW27N60M2-EP
N-channel 600 V, 0.150 Ohm typ., 20 A MDmesh M2 EP Power MOSFET in a TO-247 package
VishaySIHG22N60E-E3
MOSFET, N CH, 600V, 21A, TO-247AC; Transistor Polarity:N Channel; Continuous Dra
描述
由其分销商提供的 STMicroelectronics STW26NM60ND 的描述。
N-channel 600 V, 0.145 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-247 package
STW26NM60ND N-CHANNEL MOSFET TRANSISTOR, 21 A, 650 V, 3-PIN TO-247
N-Channel 600 V 0.175 Ohm Flange Mount Power Mosfet - TO-247
Power Field-Effect Transistor, 21A I(D), 600V, 0.175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight38.000013 g
Technical
Continuous Drain Current (ID)21 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance175 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time27.5 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.817 nF
Max Operating Temperature150 °C
Max Power Dissipation190 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max175 mΩ
Rise Time14.5 ns
Schedule B8541290080
Turn-Off Delay Time69 ns
Turn-On Delay Time22 ns
Dimensions
Height20.15 mm
Length15.75 mm
Width5.15 mm