供应链
Country of OriginIsrael
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1993-09-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
相关零件
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200V Single N-Channel HEXFET Power MOSFET in a TO-247AC Series M package, TO247-3, RoHS
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描述
由其分销商提供的 Vishay IRFP264PBF 的描述。
Single N-Channel 250 V 0.075 Ohms Flange Mount Power Mosfet - TO-247AC
Trans MOSFET N-CH 250V 38A 3-Pin(3+Tab) TO-247AC / MOSFET N-CH 250V 38A TO-247AC
Power MOSFET, N Channel, 250 V, 38 A, 0.075 ohm, TO-247AC, Through Hole
Power Field-Effect Transistor, 38A I(D), 250V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
MOSFET, N, 250V, 38A, TO-247AC; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:250V; Current, Id Cont:38A; Resistance, Rds On:0.075ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-247AC; Termination Type:Through Hole; Current, Idm Pulse:150A; Lead Spacing:5.45mm; No. of Pins:3; Power Dissipation:280W; Power, Pd:280W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:0.45°C/W; Transistors, No. of:1; Voltage, Vds Max:250V
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight38.000013 g
Technical
Continuous Drain Current (ID)38 A
Current Rating38 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance75 mΩ
Drain to Source Voltage (Vdss)250 V
Element ConfigurationSingle
Fall Time92 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.4 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation280 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation280 W
Rds On Max75 mΩ
Resistance75 mΩ
Rise Time99 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time110 ns
Turn-On Delay Time22 ns
Voltage Rating (DC)250 V
Dimensions
Height24.99 mm
Length15.87 mm
Width5.31 mm