Infineon IRFP4137PBF

Name: Infineon IRFP4137PBF
Brand: Infineon
SKU: IRFP4137PBF

Power Field-Effect Transistor, 38A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

$ 2.825

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

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Distributor		SKU		Min	Pkg
Rochester Electronics	2	IRFP4137PBF	16					2.570	2.300	2.170	5h
RS (Formerly Allied Electronics)		IRFP4137PBF	0	1	Bulk	11.380	10.010	10.010	10.010	10.010	21h
Farnell		IRFP4137PBF	0	400					2.724*	2.724*	5h
Mouser		942-IRFP4137PBF	94	1	Tube	11.380	10.170	10.170	3.350	2.970
Microchip USA		IRFP4137PBF	392	150	Tube				19.124	19.124	22h

数据表和文档

下载 Infineon IRFP4137PBF 的数据表和制造商文档。

IHS

Datasheet9 页13 年前

Datasheet8 页13 年前

库存历史记录

3 个月趋势:

-2.84%

CAD 模型

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来源	eCAD	mCAD	文件
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SnapEDA		3D	下载

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2012-10-30

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2025-03-31

LTD Date2025-09-30

描述

由其分销商提供的 Infineon IRFP4137PBF 的描述。

Power Field-Effect Transistor, 38A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

IHS

Single N-Channel 300 V 69 mOhm 83 nC HEXFET® Power Mosfet - TO-247-3AC

Future Electronics

Improved Gate, Avalanche and Dynamic dV/dt Ruggedness | MOSFET N-CH 300V 38A TO-247AC

Win Source

300V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS

Infineon SCT

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon